Crosslinked nanoparticle thin film, preparation method thereof, and thin film optoelectronic device having the same

Abstract

Disclosed are a crosslinked nanoparticle film and a preparation method therefor, and a thin film optoelectronic device. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

1 . A method for preparing crosslinked nanoparticle thin film,
 comprising:   mixing nanoparticles with a solvent to form a mixture;   obtaining a nanoparticle solution by stirring the mixture to uniformly disperse the nanoparticles in the mixture;   preparing a nanoparticle thin film from the nanoparticle solution by a solution method; and   introducing a gas mixture into an environment having the nanoparticle thin film to obtain a crosslinked nanoparticle thin film, the gas mixture promoting the crosslinking reactions of the nanoparticles.   
     
     
         2 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the gas mixture comprises a reduced gas, oxygen, water vapor and carbon dioxide. 
     
     
         3 . The method for preparing crosslinked nanoparticle thin film according to  claim 2 , wherein a bias pressure for the reduced gas is between 1 and 100 Pa, a bias pressure for the oxygen is between 0 and 2×10 4  Pa, a bias pressure for the water vapor is between 0 and 2×10 3  Pa, and a bias pressure for the carbon dioxide is between 0 and 100 Pa. 
     
     
         4 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the nanoparticle solution has a mass concentration of 1 to 100 mg/ml. 
     
     
         5 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the nanoparticles are one or more of: oxide nanoparticles, sulfide nanoparticles, selenide nanoparticles, nitride nanoparticles, and fluoride nanoparticles. 
     
     
         6 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein an average diameter of the nanoparticles is within 5 nm. 
     
     
         7 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the solvent is an alcohol solvent. 
     
     
         8 - 9 . (canceled) 
     
     
         10 . The method for preparing crosslinked nanoparticle thin film according to  claim 2 , wherein the reduced gas is one of: carbon monoxide, hydrogen, and ammonia. 
     
     
         11 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the crosslinked nanoparticle film has a thickness of 15 to 60 nm. 
     
     
         12 . (canceled) 
     
     
         13 . A thin film optoelectronic device, comprising a crosslinked nanoparticle thin film prepared by the method according to  claim 1 . 
     
     
         14 . The thin film optoelectronic device according to  claim 13 , wherein the thin film optoelectronic device is any one of: an electroluminescent device, a thin film photovoltaic, a thin film light detector, and a thin film transistor. 
     
     
         15 . The thin film optoelectronic device according to  claim 14 , wherein the thin film optoelectronic device is an electroluminescent device, the electroluminescent device comprising: a first electrode, a hole injection layer, a hole transport layer, a light emitting layer, a second electrode and an electron transport layer formed by the crosslinked nanoparticle thin film. 
     
     
         16 . The thin film optoelectronic device according to  claim 14 , wherein the thin film optoelectronic device is a photovoltaic device, the thin film photovoltaic device comprising: a first electrode, a light absorbing layer, a second electrode and an electron extraction layer formed by the crosslinked nanoparticle thin film. 
     
     
         17 . The thin film optoelectronic device according to  claim 14 , wherein the thin film optoelectronic device is a light detector device, the light detector device comprising: an anode, an electron blocking layer, a cathode and a hole blocking layer formed by the crosslinked nanoparticle thin film. 
     
     
         18 . The thin film optoelectronic device according to  claim 14 , wherein the thin film optoelectronic device is a thin film transistor, a semiconductor layer of the thin film transistor formed by the crosslinked nanoparticle thin film. 
     
     
         19 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the nanoparticle thin film is prepared from the nanoparticle solution by a solution method in a closed environment or an inert atmosphere and the environment having the nanoparticle thin film is a closed environment. 
     
     
         20 . The method for preparing crosslinked nanoparticle thin film according to  claim 1 , wherein the solution method is a chemical solution deposition for fabricating thin films,
 wherein a solution is deposited on a substrate via spin coating, ink jet printing, spray coating, or blade coating.   
     
     
         21 . The thin film electroluminescent device according to  claim 15 , wherein at least one of the first electrode and the second electrode has high light transmittance with respect to a light band emitted by the light emitting layer, and the second electrode is made from Al, Ag, Cu, Mo, Au or an alloy thereof. 
     
     
         22 . A crosslinked nanoparticle thin film, comprising: nanoparticles, connected to each other via cross-links formed by chemical bonds, and fillers, in spaces among the nanoparticles,
 wherein the formation of the cross-links of the nanoparticles is promoted by a gas mixture, the gas mixture being introduced into an environment having the thin film.   
     
     
         23 . A thin film transistor, comprising:
 a source electrode,   a drain electrode,   a gate electrode,   a semiconductor layer connected to the source electrode on a first side of the semiconductor layer and the drain electrode on a second side of the semiconductor layer,   an insulating layer connected to the gate electrode on a first side of the insulating layer and the semiconductor layer on a second side of the insulating layer, and   a substrate disposed on a bottom of the thin film transistor,   wherein the source electrode and the drain electrode are separated by the semiconductor layer.