US2020312484A1PendingUtilityA1

Dielectric film, electronic component, thin film capacitor, and electronic circuit board

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Assignee: TDK CORPPriority: Mar 25, 2019Filed: Mar 14, 2020Published: Oct 1, 2020
Est. expiryMar 25, 2039(~12.7 yrs left)· nominal 20-yr term from priority
Inventors:Shirou OotsukiAiko TakahashiWakiko Sato
H05K 1/185H05K 1/162H05K 1/036H01G 4/1227H01G 4/33H01B 3/12H05K 2201/10015C01P 2002/50C01P 2002/34C01G 29/006C01P 2006/40
42
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Claims

Abstract

This dielectric film is a dielectric film comprising an oxide having a perovskite structure. The oxide comprises (1) Bi, Na and Ti, (2) at least one of Ba and Ca, and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y. When ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by X Bi , X Ba and X Ca , respectively, the ratios satisfy 0.2≤X Bi /(X Ba +X Ca )≤5.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A dielectric film comprising an oxide having a perovskite structure, wherein
 the oxide comprises:   (1) Bi, Na and Ti;   (2) at least one of Ba and Ca; and   (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y, and   when ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide are represented by X Bi , X Ba  and X Ca , respectively, the ratios satisfy
   0.2≤ X   Bi /( X   Ba   +X   Ca )≤5.
 
   
     
     
         2 . The dielectric film according to  claim 1 , wherein when a ratio of the number of atoms of Na to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide is represented by X Na , the ratio satisfies
   0.9 X   Bi   ≤X   Na ≤1.1 X   Bi .
   
     
     
         3 . The dielectric film according to  claim 1 , wherein a ratio of the number of atoms of Ti to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide is 80% or more and 120% or less. 
     
     
         4 . The dielectric film according to  claim 1 , wherein a ratio of the number of atoms of Ln to the total of the numbers of atoms of Bi, Na, Ba and Ca in the oxide is 0.5 to 20%. 
     
     
         5 . A dielectric film comprising an oxide having a perovskite structure, wherein
 the oxide comprises:   (1) Bi, K and Ti;   (2) at least one selected from the group consisting of Ba, Sr and Ca; and   (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y, and   when ratios of the numbers of atoms of Bi, Ba, Sr and Ca to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide are represented by X Bi , X Ba , X sr  and X Ca , respectively, the ratios satisfy
   0.2≤ X   Bi /( X   Ba   +X   Sr   +X   Ca )≤5.
 
   
     
     
         6 . The dielectric film according to  claim 5 , wherein when a ratio of the number of atoms of K to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide is represented by X K , the ratio satisfies
   0.9 X   Bi   ≤X   K ≤1.1 X   Bi .
   
     
     
         7 . The dielectric film according to  claim 5 , wherein a ratio of the number of atoms of Ti to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide is 80% or more and 120% or less. 
     
     
         8 . The dielectric film according to  claim 5 , wherein a ratio of the number of atoms of Ln to the total of the numbers of atoms of Bi, K, Ba, Sr and Ca in the oxide is 0.5 to 20%. 
     
     
         9 . An electronic component comprising the dielectric film according to  claim 1 . 
     
     
         10 . A thin film capacitor comprising the dielectric film according to  claim 1 . 
     
     
         11 . An electronic circuit board comprising the dielectric film according to  claim 1 . 
     
     
         12 . An electronic circuit board comprising the electronic component according to  claim 9 . 
     
     
         13 . An electronic circuit board comprising the thin film capacitor according to  claim 10 . 
     
     
         14 . An electronic component comprising the dielectric film according to  claim 5 . 
     
     
         15 . A thin film capacitor comprising the dielectric film according to  claim 5 . 
     
     
         16 . An electronic circuit board comprising the dielectric film according to  claim 5 . 
     
     
         17 . An electronic circuit board comprising the electronic component according to  claim 14 . 
     
     
         18 . An electronic circuit board comprising the thin film capacitor according to  claim 15 .

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