Catalysts for hydrogen evolution reaction including transition metal chalcogenide films and methods of forming the same

Abstract

Catalysts for hydrogen evolution reaction (HER) and method of forming the catalysts are provided. The catalysts may include a metal chalcogenide film comprising chalcogen atom vacancies. A density of the chalcogen atom vacancies may be from about 5% to about 15%. The catalysts may further include a substrate on which the metal chalcogenide film extends. The substrate may include nickel, titanium, silver, zinc, and/or platinum. The catalysts may also include hydrogen ions disposed a surface of the metal chalcogenide film. The metal chalcogenide film may be a monolayer film including dopants, and the dopants may be nickel atoms, cobalt atoms, zinc atoms, iron atoms, rhenium (Re) atoms, and/or Niobium (Nb) atoms.

1 . A catalyst for hydrogen evolution reaction, the catalyst comprising:
 a metal chalcogenide film comprising chalcogen atom vacancies, wherein the metal chalcogenide film is a monolayer film or a film comprising less than 10 layers, and   wherein a density of the chalcogen atom vacancies is from about 5% to about 15%.   
     
     
         2 . A catalyst for hydrogen evolution reaction, the catalyst comprising:
 a substrate comprising nickel, titanium, silver, zinc, and/or platinum; and   a metal chalcogenide film extending on the substrate.   
     
     
         3 . A catalyst for hydrogen evolution reaction, the catalyst comprising:
 a substrate;   a metal chalcogenide film extending on the substrate, wherein the metal chalcogenide film comprises a first surface facing the substrate and a second surface opposite the first surface; and   hydrogen ions disposed on the first surface of the metal chalcogenide film or on the second surface of the metal chalcogenide film.   
     
     
         4 . (canceled) 
     
     
         5 . The catalyst of  claim 1 , further comprising a substrate, wherein the metal chalcogenide film extends on the substrate. 
     
     
         6 . The catalyst of  claim 5 , wherein the substrate comprises nickel, titanium, silver, zinc, and/or platinum. 
     
     
         7 . The catalyst of  claim 6 , wherein the substrate comprises a primary substrate and a platinum layer extending between the primary substrate and the metal chalcogenide film. 
     
     
         8 . The catalyst of  claim 7 , wherein the platinum layer has a thickness of from about 1 nm to about 10 nm. 
     
     
         9 . The catalyst of  claim 7 , wherein the primary substrate comprises nickel or metal. 
     
     
         10 . The catalyst of  claim 2 , wherein the metal chalcogenide film comprises chalcogen atom vacancies, and
 wherein a density of the chalcogen atom vacancies is from about 5% to about 15%.   
     
     
         11 - 12 . (canceled) 
     
     
         13 . The catalyst of  claim 2 , wherein the metal chalcogenide film comprises a first surface facing the substrate and a second surface opposite the first surface, and
 wherein the catalyst further comprises hydrogen ions on the first surface of the metal chalcogenide film or on the second surface of the metal chalcogenide film.   
     
     
         14 . The catalyst of  claim 3 , wherein the metal chalcogenide film comprises a plurality of metal chalcogenide monolayer films, and
 wherein ones of the hydrogen ions are intercalated between adjacent ones of the plurality of metal chalcogenide monolayer films.   
     
     
         15 . The catalyst of  claim 2 , wherein the metal chalcogenide film comprises dopants, and
 wherein the dopants comprises nickel atoms, cobalt atoms, zinc atoms, iron atoms, rhenium (Re) atoms, and/or Niobium (Nb) atoms.   
     
     
         16 . The catalyst of  claim 15 , wherein the metal chalcogenide film is a monolayer film or a film comprising less than 10 layers. 
     
     
         17 . The catalyst of  claim 2 , wherein a metal atom of the metal chalcogenide film is Mo, W, Co, Zn, Fe, Re, Nb, and/or Ni. 
     
     
         18 . The catalyst of  claim 17 , wherein a chalcogen atom of the metal chalcogenide film is S and/or Se. 
     
     
         19 . The catalyst of  claim 3 , wherein the metal chalcogenide film has a thickness of about 10 nm or less. 
     
     
         20 . The catalyst of  claim 3 , wherein the metal chalcogenide film has a thickness of about 30 Å or less. 
     
     
         21 . The catalyst of  claim 3 , wherein the metal chalcogenide film is a monolayer film or a film comprising less than 10 layers. 
     
     
         22 . The catalyst of  claim 1 , wherein the metal chalcogenide film is MoS 2 , WS 2 , MoSe 2 , WSe 2 , NiS, Ni 2 S 3 , NiS 2 , CoS, Co 2 S 3 , CoS 2 , ReS 2 , NbS 2 , or alloy thereof. 
     
     
         23 . The catalyst of  claim 2 , wherein the metal chalcogenide film is a polycrystalline film having an average grain size of from about 2 nm to about 2000 nm. 
     
     
         24 - 40 . (canceled)