Master Alloy for Sputtering Target and Method for Producing Sputtering Target

Abstract

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. This consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

We claim: 
     
         1 . A master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, Y1, Y2, and Y3; specifically, where:
 X1 is Ta;   Y1 is one or two types of Cr or Mn;   Y2 is one or two types of Co or Ni; and   Y3 is one or two types of Ti or V,   the master alloy comprises any one combination of X1-Y1, X1-Y2, and X1-Y3 of the foregoing constituent elements.   
     
     
         2 . The master alloy for a sputtering target according to  claim 1 , wherein a composition ratio of the Y1, Y2, or Y3 falls within a range of 50.0 to 80.0 at % of an entire composition constituting the master alloy. 
     
     
         3 . The master alloy for a sputtering target according to  claim 2 , wherein X1 as one constituent metal constituting the master alloy and Y1, Y2, or Y3 as another constituent metal constituting the master alloy form an intermetallic compound or a complete solid solution. 
     
     
         4 . The master alloy for a sputtering target according to  claim 1 , wherein X1 as one constituent metal constituting the master alloy and Y1, Y2, or Y3 as another constituent metal constituting the master alloy form an intermetallic compound or a complete solid solution. 
     
     
         5 . A method of producing a sputtering target, wherein the master alloy for a sputtering target according to  claim 1  is pulverized, and mixed with a powder composed of the X1, and the mixed powder is sintered to obtain a sputtering target material for a barrier metal. 
     
     
         6 . The method of producing a sputtering target according to  claim 5 , wherein the mixing is performed so that a composition of Y1, Y2, or Y3 constituting the master alloy falls within a range of 0.1 to 40.0 at %, and the mixed powder is sintered. 
     
     
         7 . A sputtering target in which elements constituting the sputtering target are selected from X1, Y1, Y2, and Y3, where X1 is Ta, Y1 is one or two types of Cr or Mn, Y2 is one or two types of Co or Ni, and Y3 is one or two types of Ti or V, wherein the sputtering target comprises an alloy of X1-Y1, X1-Y2, or X1-Y3, and wherein a variation in an in-plane metal composition of Y1, Y2, or Y3 of the sputtering target is 30% or less. 
     
     
         8 . The sputtering target according to  claim 7 , wherein the variation in the in-plane metal composition of Y1, Y2, or Y3 of the sputtering target is 20% or less. 
     
     
         9 . The sputtering target according to  claim 7 , wherein the variation in the in-plane metal composition of Y1, Y2, or Y3 of the sputtering target is 15% or less.