Semiconductor light emitting device and method of manufacturing the same

Abstract

A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer covering a portion of the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer covering a portion of the active layer, and sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction.

What is claimed is: 
     
         1 . A semiconductor light emitting device, comprising:
 a first conductivity-type semiconductor layer;   an active layer covering a portion of the first conductivity-type semiconductor layer; and   a second conductivity-type semiconductor layer covering a portion of the active layer,   wherein sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction.   
     
     
         2 . The semiconductor light emitting device as claimed in  claim 1 , further comprising a capping layer between the active layer and the second conductivity-type semiconductor layer and covering an overall upper surface of the active layer. 
     
     
         3 . The semiconductor light emitting device as claimed in  claim 2 , wherein sidewalls of the capping layer are coplanar with sidewalls of the active layer. 
     
     
         4 . The semiconductor light emitting device as claimed in  claim 3 , wherein the sidewalls of the active layer are coplanar with at least portions of sidewalls of the first conductivity-type semiconductor layer. 
     
     
         5 . The semiconductor light emitting device as claimed in  claim 1 , further comprising:
 a first electrode covering a portion of the first conductivity-type semiconductor layer; and   a second electrode covering a portion of the second conductivity-type semiconductor layer.   
     
     
         6 . The semiconductor light emitting device as claimed in  claim 5 , further comprising:
 a contact layer between the second conductivity-type semiconductor layer and the second electrode,   wherein the contact layer includes a transparent conductive oxide.   
     
     
         7 . The semiconductor light emitting device as claimed in  claim 5 , wherein the first electrode and the second electrode each includes a pad portion and at least one finger portion extending from the pad portion. 
     
     
         8 . The semiconductor light emitting device as claimed in  claim 1 , further comprising:
 a first electrode structure connected to the first conductivity-type semiconductor layer through at least one hole penetrating the second conductivity-type semiconductor layer and the active layer; and   a second electrode structure connected to the second conductivity-type semiconductor layer.   
     
     
         9 . The semiconductor light emitting device as claimed in  claim 8 ,
 wherein the first electrode structure further includes a first contact electrode in contact with the first conductivity-type semiconductor layer, and a first pad electrode connected to the first contact electrode, and   wherein the second electrode structure further includes a second contact electrode in contact with the second conductivity-type semiconductor layer, and a second pad electrode connected to the second contact electrode.   
     
     
         10 . The semiconductor light emitting device as claimed in  claim 8 , wherein an upper surface of the first conductivity-type semiconductor layer includes a serrated structure. 
     
     
         11 . A semiconductor light emitting device, comprising:
 a first conductivity-type semiconductor layer;   an active layer on the first conductivity-type semiconductor layer; and   a second conductivity-type semiconductor layer on the active layer,   wherein a surface area of a lower surface of the second conductivity-type semiconductor layer is less than a surface area of an upper surface of the active layer.   
     
     
         12 . The semiconductor light emitting device as claimed in  claim 11 , wherein sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction. 
     
     
         13 . The semiconductor light emitting device as claimed in  claim 11 , further comprising a capping layer between the active layer and the second conductivity-type semiconductor layer, wherein the capping layer covers an overall upper surface of the active layer and has sidewalls that are coplanar with sidewalls of the active layer. 
     
     
         14 . The semiconductor light emitting device as claimed in  claim 13 , wherein the sidewalls of the capping layer is coplanar with the sidewalls of the active layer along a horizontal direction. 
     
     
         15 . The semiconductor light emitting device as claimed in  claim 11 , wherein the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer each include In x Al y Ga 1-x-y N (0≤x<1, 0≤y<1, 0≤x+y<1). 
     
     
         16 . The semiconductor light emitting device as claimed in  claim 11 , wherein the capping layer includes the second conductivity-type impurities. 
     
     
         17 . A method of manufacturing a semiconductor light emitting device, the method comprising:
 forming a first conductivity-type semiconductor layer on a substrate;   forming an active layer on the first conductivity-type semiconductor layer;   forming a second conductivity-type semiconductor layer on a portion of the active layer;   removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer not overlapping the second conductivity-type semiconductor layer; and   removing a portion of the first conductivity-type semiconductor layer to expose the substrate.   
     
     
         18 . The method as claimed in  claim 17 , wherein forming the second conductivity-type semiconductor layer on a portion of the active layer includes:
 forming a mask layer having an opening on the active layer;   growing the second conductivity-type semiconductor layer through the opening; and   removing the mask layer.   
     
     
         19 . The method as claimed in  claim 18 , further comprising:
 forming a capping layer on the active layer before the forming the mask layer having an opening on the active layer, and   wherein the second conductivity-type semiconductor layer is formed on the capping layer through the opening.   
     
     
         20 . The method as claimed in  claim 18 , wherein the mask layer is formed of an amorphous material.