Producing method of mesoporous thin film solar cell based on perovskite

Abstract

The present disclosure described herein generally relates to a dye-sensitized solar cell including an organic-inorganic composite dye having a perovskite structure, and a producing method of the same

What is claimed is: 
     
         1 . A perovskite solar cell, comprising:
 a first electrode comprising a transparent conductive substrate;   a light absorption layer disposed on the first electrode;   a hole transport layer disposed on the light absorption layer; and   a second electrode disposed on the hole transport layer,   wherein the light absorption layer comprises a semiconductor layer on which a perovskite material is adsorbed,   wherein the perovskite solar cell does not comprise a liquid electrolyte.   
     
     
         2 . The perovskite solar cell of  claim 1 , wherein the perovskite material is represented by the following Chemical Formula 1:
   RMX 3 ,   [Chemical Formula 1]
   in the Chemical Formula 1,   R is an alkyl group of C 1-20 , an alkyl group substituted with an amine group, or an alkali metal,   M is a member selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X is halogen.   
     
     
         3 . The perovskite solar cell of  claim 1 , wherein the transparent conductive substrate comprises a glass substrate, a plastic substrate, and combinations thereof. 
     
     
         4 . The perovskite solar cell of  claim 3 , wherein the glass substrate comprises a material selected from the group consisting of an indium tin oxide (ITO), a fluorine tin oxide (FTO), ZnO—Ga 2 O 3 , ZnO—Al 2 O 3 , a tin-based oxide, a zinc oxide, and combinations thereof. 
     
     
         5 . The perovskite solar cell of  claim 3 , wherein the plastic substrate comprises a polymer selected from the group consisting of polyethylene terephthalate (PET), poly ethylene naphthalate (PEN), poly carbonate (PC), polypropylene (PP), polyimide (PI), tri-acetyl cellulose (TAC), and combinations thereof. 
     
     
         6 . The perovskite solar cell of  claim 1 , wherein the semiconductor layer comprises a metal oxide. 
     
     
         7 . The perovskite solar cell of  claim 6 , wherein the metal oxide is an oxide of a metal selected from the group consisting of titanium, tin, zinc, tungsten, zirconium, gallium, indium, yttrium, niobium, tantalum, vanadium, and combinations thereof. 
     
     
         8 . The perovskite solar cell of  claim 1 , wherein the thickness of the semiconductor layer is 3.0 μm or less. 
     
     
         9 . The perovskite solar cell of  claim 1 , wherein the thickness of the semiconductor layer is 1.0 μm or less. 
     
     
         10 . The perovskite solar cell of  claim 8 , wherein an energy conversion efficiency of the perovskite solar cell increases as the thickness of the semiconductor layer decreases. 
     
     
         11 . The perovskite solar cell of  claim 1 , wherein the hole transport layer comprises a unimolecular or polymeric hole transport material. 
     
     
         12 . The perovskite solar cell of  claim 1 , wherein the second electrode comprises a member selected from the group consisting of Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C, a conductive polymer, and combinations thereof. 
     
     
         13 . A method for preparing the perovskite solar cell comprising:
 forming a first electrode on a substrate;   forming a semiconductor layer on the first electrode;   adsorbing a perovskite material to the semiconductor layer, followed by a heat treatment to form a light absorption layer;   forming a hole transport layer on the light absorption layer; and   forming a second electrode on the hole transport layer,   wherein the perovskite solar cell does not comprise a liquid electrolyte.   
     
     
         14 . The method of  claim 13 , wherein the perovskite material is represented by the following Chemical Formula 1:
   RMX 3 ,   [Chemical Formula 1]
   in the Chemical Formula 1,   R is an alkyl group of C 1-20 , an alkyl group substituted with an amine group, or an alkali metal,   M is a member selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X is halogen.   
     
     
         15 . The method of  claim 13 , wherein the semiconductor layer is formed on the first electrode by a doctor blade method, a screen printing method, a spin coating method, or a spraying method. 
     
     
         16 . The method of  claim 13 , further comprising coating a polymer on the semiconductor layer followed by heat treatment. 
     
     
         17 . The method of  claim 16 , wherein the polymer comprises a member selected from the group consisting of ethylenecellulose, hydroxypropylcellulose, polyethyleneglycol, polyethyleneoxide, polyvinylalcohol, polyvinylpyrrolidone, and combinations thereof. 
     
     
         18 . The method of  claim 13 , wherein the adsorbing comprises depositing on the semiconductor layer a solution comprising the perovskite material in an amount of from 30 wt % to 50 wt % of the total weight of the solution. 
     
     
         19 . The method of  claim 13 , wherein forming the light absorption layer comprises coating a precursor solution of the perovskite material on the semiconductor layer, followed by heat treatment at from 40° C. to 300° C. 
     
     
         20 . The method of  claim 13 , wherein the semiconductor is formed on the first electrode with a thickness of 3.0 μm or less.