Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

1 . (canceled) 
     
     
         2 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming a separation layer comprising silicon over a glass substrate;   forming a layer over the separation layer, the layer including a semiconductor element; and   scanning the separation layer with a laser light through the glass substrate thereby separating the glass substrate from the layer.   
     
     
         3 . The method according to  claim 2 , wherein the layer further includes an insulating layer under the semiconductor element. 
     
     
         4 . The method according to  claim 2 , wherein the separation layer comprises one of amorphous silicon and polysilicon. 
     
     
         5 . The method according to  claim 2 , further comprising the step of:
 bonding a supporting member over the layer using a first adhesive layer before separating the glass substrate.   
     
     
         6 . The method according to  claim 2 , further comprising the steps of:
 bonding a flexible substrate under the layer using a second adhesive layer after separating the glass substrate.   
     
     
         7 . The method according to  claim 6 , further comprising the step of:
 pasting the flexible substrate with the layer on a curved surface.   
     
     
         8 . The method according to  claim 6 , wherein the flexible substrate comprises at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, polycarbonate, nylon, polyetheretherketone, polysulfone, polyetherimide, polyarylate, polybutylene terephthalate, and polyimide. 
     
     
         9 . The method according to  claim 5 , wherein the first adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives. 
     
     
         10 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming a separation layer comprising silicon over a glass substrate;   forming a layer over the separation layer, the layer including a semiconductor element and an light emitting element; and   scanning the separation layer with a laser light through the glass substrate thereby separating the glass substrate from the layer.   
     
     
         11 . The method according to  claim 10 , wherein the layer further includes an insulating layer under the semiconductor element. 
     
     
         12 . The method according to  claim 10 , wherein the separation layer comprises one of amorphous silicon and polysilicon. 
     
     
         13 . The method according to  claim 10 , further comprising the step of:
 bonding a supporting member over the layer using a first adhesive layer before separating the glass substrate.   
     
     
         14 . The method according to  claim 10 , further comprising the steps of:
 bonding a flexible substrate under the layer using a second adhesive layer after separating the glass substrate.   
     
     
         15 . The method according to  claim 14 , further comprising the step of:
 pasting the flexible substrate with the layer on a curved surface.   
     
     
         16 . The method according to  claim 14 , wherein the flexible substrate comprises at least one of polyethyleneterephthalate, polyethersulfone, polyethylene naphthalate, polycarbonate, nylon, polyetheretherketone, polysulfone, polyetherimide, polyarylate, polybutylene terephthalate, and polyimide. 
     
     
         17 . The method according to  claim 13 , wherein the first adhesive layer comprises at least one of reaction-cured adhesives, thermally-curable adhesives, photo-curable adhesives, and anaerobic adhesives.