US2020283659A1PendingUtilityA1

Polishing liquid, polishing liquid set, polishing method, anddefect suppression method

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Assignee: HITACHI CHEMICAL CO LTDPriority: Oct 3, 2017Filed: Oct 1, 2018Published: Sep 10, 2020
Est. expiryOct 3, 2037(~11.2 yrs left)· nominal 20-yr term from priority
Inventors:Hisato TakahashiMasayuki HananoToshio Takizawa
H10P 70/27H10P 95/062C09K 3/1463B24B 37/044C08K 2003/2213C08L 33/06C09G 1/02H10P 95/06C09K 3/14C08K 3/22C08K 3/36C08L 33/02C08L 71/02C08K 5/3462C08K 5/3412C08L 33/04H01L 21/02068
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Claims

Abstract

A polishing liquid containing: abrasive grains containing at least one selected from the group consisting of cerium oxide and silicon oxide; a nitrogen-containing compound; and water, in which the nitrogen-containing compound contains at least one selected from the group consisting of (I) a compound having an aromatic ring containing one nitrogen atom in the ring and a hydroxyl group, (II) a compound having an aromatic ring containing one nitrogen atom in the ring and a functional group containing a nitrogen atom, (III) a compound having a 6-membered ring containing two nitrogen atoms in the ring, (IV) a compound having a benzene ring and a ring containing a nitrogen atom in the ring, and (V) a compound having a benzene ring to which two or more functional groups containing a nitrogen atom are bonded.

Claims

exact text as granted — not AI-modified
1 . A polishing liquid comprising: abrasive grains containing at least one selected from the group consisting of cerium oxide and silicon oxide; a nitrogen-containing compound; and water, wherein
 the nitrogen-containing compound contains at least one selected from the group consisting of (I) a compound having an aromatic ring containing one nitrogen atom in the ring and a hydroxyl group, (II) a compound having an aromatic ring containing one nitrogen atom in the ring and a functional group containing a nitrogen atom, (Ill) a compound having a 6-membered ring containing two nitrogen atoms in the ring, (IV) a compound having a benzene ring and a ring containing a nitrogen atom in the ring, and (V) a compound having a benzene ring to which two or more functional groups containing a nitrogen atom are bonded.   
     
     
         2 . The polishing liquid according to  claim 1 , wherein the nitrogen-containing compound contains the compound (II). 
     
     
         3 . The polishing liquid according to  claim 1 , wherein the nitrogen-containing compound contains the compound (III). 
     
     
         4 . The polishing liquid according to  claim 1 , wherein the nitrogen-containing compound contains nicotinamide. 
     
     
         5 . The polishing liquid according to  claim 1 , wherein the nitrogen-containing compound contains aminopyridine. 
     
     
         6 . The polishing liquid according to  claim 1 , wherein the nitrogen-containing compound contains pyrazinamide. 
     
     
         7 . The polishing liquid according to  claim 1 , further comprising a polymer compound (A) having at least one selected from the group consisting of a carboxylic acid group and a carboxylate group. 
     
     
         8 . The polishing liquid according to  claim 7 , wherein a content of the polymer compound (A) is 0.001 to 2% by mass. 
     
     
         9 . The polishing liquid according to  claim 1 , further comprising a nonionic polymer compound (B). 
     
     
         10 . The polishing liquid according to  claim 1 , further comprising a basic compound. 
     
     
         11 . The polishing liquid according to  claim 10 , wherein a content of the basic compound is 0.04 mol/kg or less. 
     
     
         12 . The polishing liquid according to  claim 1 , wherein the abrasive grains contain cerium oxide. 
     
     
         13 . The polishing liquid according to  claim 1 , wherein the abrasive grains contain silicon oxide. 
     
     
         14 . The polishing liquid according to  claim 1 , wherein a content of the abrasive grains is 0.01 to 20% by mass. 
     
     
         15 . The polishing liquid according to  claim 1 , wherein a pH is 4.0 to 7.5. 
     
     
         16 . The polishing liquid according to  claim 1 , wherein a pH is more than 4.0. 
     
     
         17 . A polishing liquid set comprising:
 constituent components of the polishing liquid according to  claim 1  stored while being divided into a first liquid and a second liquid,   the first liquid containing the abrasive grains and water,   the second liquid containing the nitrogen-containing compound and water.   
     
     
         18 . A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to  claim 1 . 
     
     
         19 . The polishing method according to  claim 18 , wherein the surface to be polished contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon. 
     
     
         20 . The polishing method according to  claim 18 , wherein the surface to be polished contains amorphous silicon. 
     
     
         21 . A defect suppression method suppressing occurrence of defects in polishing of a surface to be polished containing a stopper material, the method comprising:
 a step of polishing a surface to be polished by using the polishing liquid according to  claim 1 .   
     
     
         22 . The defect suppression method according to  claim 21 , wherein the stopper material contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon. 
     
     
         23 . The defect suppression method according to  claim 21 , wherein the stopper material contains amorphous silicon. 
     
     
         24 . A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to  claim 17 . 
     
     
         25 . The polishing method according to  claim 24 , wherein the surface to be polished contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon. 
     
     
         26 . The polishing method according to  claim 24 , wherein the surface to be polished contains amorphous silicon. 
     
     
         27 . A defect suppression method suppressing occurrence of defects in polishing of a surface to be polished containing a stopper material, the method comprising:
 a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to  claim 17 .   
     
     
         28 . The defect suppression method according to  claim 27 , wherein the stopper material contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon. 
     
     
         29 . The defect suppression method according to  claim 27 , wherein the stopper material contains amorphous silicon.

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