Organic thin film transistor, and fabricating method thereof

Abstract

An organic thin film transistor includes a transparent base substrate and a transparent gate layer formed on the transparent base substrate. A gate insulating layer includes an oxidized inorganic sub-layer and a non-oxidized organic sub-layer formed on the transparent gate layer. A source electrode and a drain electrode are buried within the non-oxidized organic sub-layer. Each of the source electrode and the drain electrode has a bottom side, and the bottom side surface of each of the source electrode and the drain electrode faces the transparent gate layer and contacts the non-oxidized organic sub-layer. The transparent gate layer is buried within the oxidized inorganic sub-layer, and the oxidized inorganic sub-layer covers a top surface and side surfaces of the transparent gate layer.

What is claimed is: 
     
         1 . An organic thin film transistor, comprising:
 a transparent base substrate;   a transparent gate layer formed on the transparent base substrate;   a gate insulating layer including an oxidized inorganic sub-layer and a non-oxidized organic sub-layer on the transparent gate layer; and   a source electrode and a drain electrode buried within the non-oxidized organic sub-layer, each of the source electrode and the drain electrode having a bottom side, and the bottom side surface of each of the source electrode and the drain electrode facing the transparent gate layer and contacting the non-oxidized organic sub-layer, wherein the transparent gate layer is buried within the oxidized inorganic sub-layer, and the oxidized inorganic sub-layer covers a top surface and side surfaces of the transparent gate layer.   
     
     
         2 . The organic thin film transistor of  claim 1 , wherein the transparent gate layer and the transparent base substrate are transparent to ultraviolet light. 
     
     
         3 . The organic thin film transistor of  claim 1 , wherein the oxidized inorganic sub-layer includes a portion of a first initial silicone polymer layer, the portion of the first initial silicone polymer layer being oxidized. 
     
     
         4 . The organic thin film transistor of  claim 3 , wherein the first initial silicone polymer layer includes a polydimethylsiloxane film or a derivative of polydimethylsiloxane film. 
     
     
         5 . The organic thin film transistor of  claim 3 , wherein the first initial silicone polymer layer includes a polydimethylsiloxane film or a hydroxylated polydimethylsiloxane film. 
     
     
         6 . The organic thin film transistor of  claim 3 , wherein the oxidized inorganic sub-layer includes SiO 2  and the non-oxidized organic sub-layer includes the first initial silicone polymer. 
     
     
         7 . The organic thin film transistor of  claim 1 , further comprising a recessed part formed on the gate insulating layer, wherein the source electrode and the drain electrode are buried within the non-oxidized organic sub-layer in the recessed part. 
     
     
         8 . The organic thin film transistor of  claim 7 , wherein a surface energy reducing solution is coated on a portion of the gate insulating layer other than the recessed part. 
     
     
         9 . The organic thin film transistor of  claim 8 , wherein the surface energy reducing solution on the portion of the gate insulating layer other than the recessed part is identical to a surface energy reducing solution coated on a carrying substrate. 
     
     
         10 . The organic thin film transistor of  claim 1 , further comprising an organic semiconductor layer that contacts with both the source electrode and the drain electrode as an active layer, wherein a material of the active layer includes one of polythiophene, polyaniline, polypyrrole, polyfluorene, pentacene, and titanyl phthalocyanine. 
     
     
         11 . The organic thin film transistor of  claim 1 , wherein the source electrode and the drain electrode include a metal material extracted from a hydrophilic solvent. 
     
     
         12 . The organic thin film transistor of  claim 11 , wherein:
 the metal material includes one of gold, aluminum, chromium, titanium, nickel, molybdenum, and an alloy thereof, and   the hydrophilic solvent includes an ethanol solvent.   
     
     
         13 . The organic thin film transistor of  claim 8 , wherein:
 a material of the transparent gate layer includes one of indium tin oxide, indium zinc oxide, and graphene, and   the surface energy reducing solution includes a hexamethyldisilazane solution or an octadecyltrichlorosilane solution.   
     
     
         14 . The organic thin film transistor of  claim 10 , further comprising a protecting layer that includes an oxidized inorganic protecting sub-layer and a non-oxidized organic protecting sub-layer on the active layer, wherein the oxidized inorganic protecting layer includes a portion of a second initial silicone polymer layer, the portion of the second initial silicone polymer layer being oxidized. 
     
     
         15 . The organic thin film transistor of  claim 14 , wherein the oxidized inorganic protecting sub-layer includes SiO 2  and the non-oxidized organic protecting sub-layer contacts the active layer. 
     
     
         16 . The organic thin film transistor of  claim 14 , wherein the active layer is buried within the non-oxidized organic protecting sub-layer. 
     
     
         17 . The organic thin film transistor of  claim 14 , wherein the second initial silicone polymer layer includes a polydimethylsiloxane film or a derivative of polydimethylsiloxane film. 
     
     
         18 . The organic thin film transistor of  claim 3 , wherein:
 the first initial silicone polymer layer includes a polydimethylsiloxane film or a derivative of polydimethylsiloxane film,   the oxidized inorganic sub-layer includes SiO 2 , and   the non-oxidized organic sub-layer includes a polydimethylsiloxane film or a derivative of polydimethylsiloxane film.   
     
     
         19 . The organic thin film transistor of  claim 14 , wherein the protecting layer includes SiO 2  and a polydimethylsiloxane film. 
     
     
         20 . A semiconductor device, comprising the organic thin film transistor of  claim 1 .