Ceramic Overvoltage Protection Device Having Low Capacitance and Improved Durability

Abstract

Provided is an improved overvoltage protection element. The overvoltage protection device comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.

1 - 31 . (canceled) 
     
     
         32 . A method for forming an overvoltage protection device comprising:
 Manufacturing at least one first layer comprising a secondary insulator precursor and an overvoltage protection element precursor on a primary insulator precursor;   forming at least one second layer on an internal insulator precursor comprising a pair of discharge electrodes and a gap insulator precursor between said discharge electrodes;   forming a stack comprising said at least one first layer on said at least one second layer in registration with said over overvoltage protection element precursor overlaying said gap insulator precursor; and   heating said stack to form a laminated stack comprising:
 discharge electrodes in a plane; 
 a gap insulator between said discharge electrodes in said plane; 
 an overvoltage protection element parallel to said discharge electrodes; and 
 a primary insulator layer between said discharge electrodes and said overvoltage protection element. 
   
     
     
         33 . The method for forming an overvoltage protection device of  claim 32  wherein said overvoltage protection element comprises a conductor and a secondary material. 
     
     
         34 . The method for forming an overvoltage protection device of  claim 33  wherein said overvoltage protection element has a ratio of said conductor to said secondary material of at least 50 vol % to no more than 90 vol %. 
     
     
         35 . The method for forming an overvoltage protection device of  claim 33  wherein said conductor is selected from the group consisting of La, Ni, Co, Cu, Zn, Ru, Ag, Pd, Pt, W, Fe or Bi. 
     
     
         36 . The method for forming an overvoltage protection device of  claim 33  wherein said secondary material is selected from the group consisting of a ceramic, a glass and a semiconductor. 
     
     
         37 . The method for forming an overvoltage protection device of  claim 36  wherein ceramic is selected from the group consisting of barium titanate and tantalum nitride. 
     
     
         38 . The method for forming an overvoltage protection device of  claim 32  wherein said primary insulator layer has a permittivity of less than 100. 
     
     
         39 . The method for forming an overvoltage protection device of  claim 38  wherein said permittivity is less than 50. 
     
     
         40 . The method for forming an overvoltage protection device of  claim 32  wherein said primary insulator layer has a thickness of at least 1 μm to no more than 10 μm. 
     
     
         41 . The method for forming an overvoltage protection device of  claim 32  wherein said primary insulator layer comprises an insulating ceramic. 
     
     
         42 . The method for forming an overvoltage protection device of  claim 41  wherein said primary insulator layer is selected from the group consisting of calcium zirconate, non-stoichiometric barium titanium oxide; barium rare-earth oxide; titania; calcium titanate, strontium titanate, zinc magnesium titanate, zirconium tin titanate and combinations thereof. 
     
     
         43 . The method for forming an overvoltage protection device of  claim 42  wherein said non-stoichiometric barium titanium oxide is selected from the group consisting of Ba 2 Ti 9 O 2 O or BaTi 4 O 9 . 
     
     
         44 . The method for forming an overvoltage protection device of  claim 42  wherein said barium rare-earth oxide contains neodymium or praseodymium. 
     
     
         45 . The method for forming an overvoltage protection device of  claim 42  wherein said titania is doped titania. 
     
     
         46 . The method for forming an overvoltage protection device of  claim 32  comprising forming a stack comprising no more than 20 first layers and second layers. 
     
     
         47 . The method for forming an overvoltage protection device of  claim 46  comprising forming a stack comprising 3 to 10 of said first layers and said second layers. 
     
     
         48 . The method for forming an overvoltage protection device of  claim 32  wherein said discharge electrodes comprise at least one metal selected from the group consisting of nickel, tungsten, molybdenum, aluminum, chromium, copper, palladium, silver or an alloy thereof. 
     
     
         49 . The method for forming an overvoltage protection device of  claim 48  wherein said discharge electrode comprises nickel. 
     
     
         50 . The method for forming an overvoltage protection device of  claim 32  further comprising forming external terminations. 
     
     
         51 . The method for forming an overvoltage protection device of  claim 32  further comprising forming alternating layers of capacitive couple precursors prior to said forming said stack. 
     
     
         52 . The method for forming an overvoltage protection device of  claim 51  wherein said forming said stack further comprises overlaying said alternating layers of capacitive couple precursors prior to said heating. 
     
     
         53 . The method for forming an overvoltage protection device of  claim 51  wherein said alternating layers of said capacitive couple comprise at least one floating electrode precursor. 
     
     
         54 - 82 . (canceled)