Method for forming metallization structure

Abstract

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.

What is claimed is: 
     
         1 . A method for forming the metallization structure, comprising:
 providing a substrate;   forming a graphene oxide layer on the substrate;   modifying the graphene oxide layer to form a graphene oxide catalytic layer; and   performing a metallization process on the graphene oxide catalytic layer.   
     
     
         2 . The method for forming the metallization structure as claimed in  claim 1 , further comprising performing a patterning process after providing the substrate. 
     
     
         3 . The method for forming the metallization structure as claimed in  claim 1 , wherein modifying the graphene oxide layer is performed by providing a metal complex. 
     
     
         4 . The method for forming the metallization structure as claimed in  claim 3 , wherein the metal complex comprises copper complex, gold complex, nickel complex, silver complex, palladium complex, platinum complex, or rhodium complex. 
     
     
         5 . The method for forming the metallization structure as claimed in  claim 1 , wherein the metallization process is performed by electroless plating.