Transfer arm for film frame substrate handling during plasma singulation of wafers

Abstract

Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch apparatus includes a plasma etch chamber. The plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber, a cathode assembly disposed below the plasma source, and a support pedestal for supporting a substrate carrier below the plasma source. The plasma etch apparatus also includes a transfer chamber coupled to the plasma etch chamber. The transfer chamber includes a transfer arm for supporting a substantial portion of a dicing tape of the substrate carrier, the transfer arm configured to transfer a sample from the support pedestal following an etch singulation process.

What is claimed is: 
     
         1 . A plasma etch apparatus, comprising:
 a plasma etch chamber, comprising:
 a plasma source disposed in an upper region of the plasma etch chamber; 
 a cathode assembly disposed below the plasma source; and 
 a support pedestal for supporting a substrate carrier below the plasma source; and 
   a transfer chamber coupled to the plasma etch chamber, the transfer chamber comprising a transfer arm for supporting a substantial portion of a dicing tape of the substrate carrier, the transfer arm configured to transfer a sample from the support pedestal following an etch singulation process.   
     
     
         2 . The plasma etch apparatus of  claim 1 , wherein the transfer arm is a passively cooled transfer arm. 
     
     
         3 . The plasma etch apparatus of  claim 1 , wherein the transfer arm is an actively cooled transfer arm. 
     
     
         4 . The plasma etch apparatus of  claim 3 , wherein the actively cooled transfer arm comprises grooves formed in a supporting surface of the transfer arm, the grooves for flowing a cooling gas therein. 
     
     
         5 . The plasma etch apparatus of  claim 3 , wherein the actively cooled transfer arm comprises internal channels for flowing a cooling fluid there through. 
     
     
         6 . The plasma etch apparatus of  claim 1 , wherein the plasma etch chamber and the transfer chamber are housed in a cluster tool. 
     
     
         7 . The plasma etch apparatus of  claim 6 , wherein the cluster tool is coupled to a laser scribing assembly through a common factory interface. 
     
     
         8 . A plasma etch apparatus, comprising:
 a transfer chamber; and   a transfer arm housed in the transfer chamber, the transfer arm for supporting a substantial portion of a dicing tape of a substrate carrier, the transfer arm having a support portion having a body, wherein the support portion of the transfer arm is to completely laterally surround the substrate carrier, and the transfer arm comprising internal channels below a region of the dicing tape to be supported by the transfer arm, and wherein the internal cooling channels are disposed in an area of the body of the support portion of the transfer arm, the area larger than the area of the semiconductor wafer.   
     
     
         9 . The plasma etch apparatus of  claim 8 , wherein the transfer chamber is housed in a cluster tool. 
     
     
         10 . The plasma etch apparatus of  claim 9 , wherein the cluster tool is coupled to a laser scribing assembly through a common factory interface.