US2020251561A1PendingUtilityA1
SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME
Est. expiryFeb 6, 2039(~12.5 yrs left)· nominal 20-yr term from priority
H10P 14/3408H10P 14/2904H10D 8/00H10P 14/24H10P 14/36H10P 14/2926H10D 62/60C30B 25/20C30B 29/36C30B 25/02H10D 62/8325H10D 62/53C30B 28/14H01L 29/1608H01L 21/02378H01L 21/02529H01L 29/36
56
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A SiC epitaxial wafer includes a SiC epitaxial layer formed on a SiC single crystal substrate, in which a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm 2 or less.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A SiC epitaxial wafer comprising a SiC epitaxial layer formed on a SiC single crystal substrate,
wherein a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm 2 or less.
2 . A SiC epitaxial wafer according to claim 1 ,
wherein a density of the large-pit defects caused by micropipes in the substrate is 0.5 defect/cm 2 or less.
3 . A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method comprising:
a step of selecting a SiC single crystal substrate in which a total density of micropipes and substrate carbon inclusions in the SiC single crystal substrate is 1 defect/cm 2 or less.Join the waitlist — get patent alerts
Track US2020251561A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.