Intelligent customizable wet processing system

Abstract

Embodiments of wet processing systems and methods for uniform wet processing are disclosed. A method described in the present disclosure includes measuring one or more wafer characteristics of a wafer using a plurality of detectors and determining a wafer profile of the wafer based on the measured one or more wafer characteristics. The method also includes setting first and second sets of wet processing parameters of a wet processing system for respective first and second wafer regions based on the wafer profile, where a value of at least one wet processing parameter is different between the first and second sets of wet processing parameters. The method further includes performing wet processing on the wafer by dispensing one or more chemicals onto the first and second wafer regions according to the respective first and second sets of wet processing parameters.

What is claimed is: 
     
         1 . A method, comprising:
 measuring one or more wafer characteristics of a wafer using a plurality of detectors;   determining a wafer profile of the wafer based on the measured one or more wafer characteristics;   setting first and second sets of wet processing parameters of a wet processing system for respective first and second wafer regions based on the wafer profile, wherein a value of at least one wet processing parameter is different between the first and second sets of wet processing parameters; and   performing wet processing on the wafer by dispensing one or more chemicals onto the first and second wafer regions according to the respective first and second sets of wet processing parameters.   
     
     
         2 . The method of  claim 1 , wherein dispensing the one or more chemicals comprises dispensing, by a spray nozzle, one or more chemical solutions onto the wafer. 
     
     
         3 . The method of  claim 2 , wherein the first or second set of wet processing parameters comprises at least one of an angle of the spray nozzle, a height of the spray nozzle, and a lateral scanning speed of the spray nozzle. 
     
     
         4 . The method of  claim 2 , wherein dispensing the one or more chemicals comprises moving the spray nozzle above the first region of the wafer at a first lateral scanning speed and above the second region of the wafer at a second lateral scanning speed. 
     
     
         5 . The method of  claim 4 , wherein the first and second regions comprise center and peripheral regions of the wafer respectively, and the first lateral scanning speed is lower than the second lateral scanning speed. 
     
     
         6 . The method of  claim 5 , wherein moving the spray nozzle above the center region of the wafer comprises positioning the spray nozzle over wafer surface areas that are within 15% of a wafer radius from a wafer center. 
     
     
         7 . The method of  claim 5 , wherein moving the spray nozzle above the center region of the wafer comprises positioning the spray nozzle at an acute angle with respect to a top surface of the wafer. 
     
     
         8 . The method of  claim 7 , wherein the acute angle is between about 30° and about 75°. 
     
     
         9 . The method of  claim 1 , wherein the first and second sets of wet processing parameters comprise at least one of a flow rate of the one or more chemicals. 
     
     
         10 . The method of  claim 1 , wherein measuring the one or more wafer characteristics comprises measuring a thin film thicknesses on the wafer. 
     
     
         11 . A method for processing a wafer in a wet processing system, comprising:
 measuring one or more wafer characteristics of a wafer using a plurality of detectors;   determining a wafer profile of the wafer based on the one or more wafer characteristics;   setting one or more parameters of the wet processing system based on the wafer profile;   performing wet processing on the wafer by dispensing one or more chemicals into a processing chamber according to the one or more parameters; and   determining whether wet processing results across the wafer are within a variation threshold value;   in response to the determined wet processing results being within the variation threshold value, maintaining the one or more parameters of the wet processing system; and   in response to the determined wet processing results being outside the variation threshold value, adjusting the one or more parameters of the wet processing system.   
     
     
         12 . The method of  claim 11 , wherein dispensing the one or more chemicals comprises dispensing, by a spray nozzle, one or more chemical solutions onto the wafer. 
     
     
         13 . The method of  claim 12 , wherein setting the one or more parameters comprise setting at least one of an angle of the spray nozzle, a height of the spray nozzle, and a lateral scanning speed of the spray nozzle. 
     
     
         14 . The method of  claim 12 , wherein setting the one or more parameters comprises configuring the spray nozzle to move over a center region of the wafer at a first lateral scanning speed and to move over a peripheral region of the wafer at a second lateral scanning speed that is lower than the first lateral scanning speed. 
     
     
         15 . The method of  claim 12 , wherein setting the one or more parameters comprises positioning the spray nozzle at an acute angle with reference to a top surface of the wafer. 
     
     
         16 . A wet processing system, comprising:
 one or more detectors configured to determine one or more wafer characteristics of a wafer;   a spray nozzle; and   a processing system configured to:
 receive the one or more wafer characteristics; 
 determine a wafer profile based on the one or more wafer characteristics; 
 set one or more parameters of the wet processing system based on the wafer profile; and 
 control the spray nozzle to dispense one or more chemicals according to the one or more parameters. 
   
     
     
         17 . The wet processing system of  claim 16 , wherein the one or more parameters comprise at least one of an angle of the spray nozzle, a height of the spray nozzle, and a lateral scanning speed of the spray nozzle. 
     
     
         18 . The wet processing system of  claim 16 , wherein the one or more wafer characteristics comprise thin film thickness and thin film composition. 
     
     
         19 . The wet processing system of  claim 16 , wherein the spray nozzle is at an acute angle with respect to a top surface of the wafer. 
     
     
         20 . The wet processing system of  claim 16 , further comprising a processing chamber, wherein
 the spray nozzle is positioned within the processing chamber; and   the processing system is further configured to control the spray nozzle to dispense the one or more chemicals into the processing chamber.