Method of making a tantalum sputter target and sputter targets made thereby

Abstract

Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {100} banding factors.

1 - 12 . (canceled) 
     
     
         13 . A thin film for semiconductor applications created by using the BCC metal or BCC metal alloy sputter target according to  claim 14 , where variation in film thickness uniformity (percent non-uniformity) is 3.000% or less, and variation in sheet resistance, within wafers, and between wafers is 4.00% or less. 
     
     
         14 . A BCC metal or BCC metal alloy sputter target, the sputter target comprising a Ta metal or a Ta metal alloy, said target having a thickness dimension and having a purity of at least 99.5% and a combined C, O, N, H content of less than about 25 ppm, said Ta metal or Ta metal alloy having a grain size of from about 50 to 150 microns and mixed texture with no banding throughout the mid-fraction of said thickness dimension. 
     
     
         15 . The BCC metal or BCC metal alloy sputter target as recited in  claim 14 , wherein said C, O, N, H content is less than 25 ppm and said grain size is from about 50 to 150 microns. 
     
     
         16 . The BCC metal or BCC metal alloy sputter target as recited in  claim 14 , having a purity of 99.995% or greater. 
     
     
         17 . The BCC metal or BCC metal alloy sputter target as recited in  claim 14 , wherein said target has a predominate mix of {100} and {111} textures and has reduced {100} and {111} banding factors wherein each of the B {100} and B {111} banding factors is less than 5.00%. 
     
     
         18 . The BCC metal or BCC metal alloy sputter target as recited in  claim 17 , wherein B {100} and B {111} are each less than 4.50%. 
     
     
         19 . The BCC metal or BCC metal alloy sputter target as recited in  claim 18 , wherein the average of B {100} and B {111} is less than about 4.00%. 
     
     
         20 . The BCC metal or BCC metal alloy sputter target as recited in  claim 18 , wherein said target has a {100} mole fraction of about 30%, and a mole {111} fraction of about 27%.