Titanium Sputtering Target, Production Method Therefor, And Method For Producing Titanium-Containing Thin Film

Abstract

Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.

1 . A titanium sputtering target, comprising a recrystallized structure having an average crystal grain diameter of 1 μm or less, wherein the titanium sputtering target has a purity of 4N (99.99% by mass) or more. 
     
     
         2 . The titanium sputtering target according to  claim 1 , wherein the titanium sputtering target has a Vickers hardness of 140 Hv or more. 
     
     
         3 . (canceled) 
     
     
         4 . A method for producing a titanium sputtering target, the method comprising the steps of:
 subjecting a cut titanium ingot having a purity of 4N (99.99% by mass) or more to strain processing to provide a processed sheet having a total strain amount of 2 or more;   subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and   subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.   
     
     
         5 . The method for producing the titanium sputtering target according to  claim 4 , wherein a processing temperature in the strain processing is 500° C. or less. 
     
     
         6 . The method for producing the titanium sputtering target according to  claim 4 , wherein the strain processing is multidirectional forging. 
     
     
         7 . The method for producing the titanium sputtering target according to  claim 4 , wherein a rolling ratio in the cold rolling is more than 70%. 
     
     
         8 . The method for producing the titanium sputtering target according to  claim 4 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         9 . (canceled) 
     
     
         10 . A method for producing a titanium-containing thin film, the method comprising using the titanium sputtering target according to  claim 1  as a sputtering source. 
     
     
         11 . The method for producing the titanium sputtering target according to  claim 5 , wherein the strain processing is multidirectional forging. 
     
     
         12 . The method for producing the titanium sputtering target according to  claim 5 , wherein a rolling ratio in the cold rolling is more than 70%. 
     
     
         13 . The method for producing the titanium sputtering target according to  claim 6 , wherein a rolling ratio in the cold rolling is more than 70%. 
     
     
         14 . The method for producing the titanium sputtering target according to  claim 11 , wherein a rolling ratio in the cold rolling is more than 70%. 
     
     
         15 . The method for producing the titanium sputtering target according to  claim 5 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         16 . The method for producing the titanium sputtering target according to  claim 6 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         17 . The method for producing the titanium sputtering target according to  claim 7 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         18 . The method for producing the titanium sputtering target according to  claim 11 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         19 . The method for producing the titanium sputtering target according to  claim 12  wherein a total strain amount of the processed sheet is more than 3. 
     
     
         20 . The method for producing the titanium sputtering target according to  claim 13 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         21 . The method for producing the titanium sputtering target according to  claim 14 , wherein a total strain amount of the processed sheet is more than 3. 
     
     
         22 . A method for producing a titanium-containing thin film, the method comprising using the titanium sputtering target according to  claim 2  as a sputtering source.