Integrated circuit packaging structure and manufacturing method thereof

Abstract

An integrated circuit (IC) packaging structure includes a packaging substrate, one or a plurality of dies, an encapsulation material, at least one trench, and a heat dissipation structure. The one or the plurality of the dies is disposed on the packaging substrate. The encapsulation material is disposed on the packaging substrate and is configured to encapsulate the one or the plurality of the dies on the packaging substrate. The at least one trench is disposed in the encapsulation material. At least a part of the heat dissipation structure is disposed in the at least one trench. The cooling capability of the IC packaging structure may be improved by the heat dissipation structure without increasing the size of the IC packaging structure significantly.

1 : An integrated circuit (IC) packaging structure, comprising:
 a packaging substrate;   one or a plurality of dies disposed on the packaging substrate;   an encapsulation material disposed on the packaging substrate and configured to encapsulate the one or the plurality of the dies on the packaging substrate;   at least one trench disposed in the encapsulation material; and   a heat dissipation structure, wherein at least a part of the heat dissipation structure is disposed in the at least one trench.   
     
     
         2 : The IC packaging structure according to  claim 1 , wherein a heat transfer coefficient of the heat dissipation structure is higher than a heat transfer coefficient of the encapsulation material. 
     
     
         3 : The IC packaging structure according to  claim 1 , wherein the heat dissipation structure is isolated from the one or the plurality of the dies by the encapsulation material. 
     
     
         4 : The IC packaging structure according to  claim 1 , wherein the heat dissipation structure comprises:
 a first portion disposed in the at least one trench; and   a second portion disposed on a surface of the encapsulation material.   
     
     
         5 : The IC packaging structure according to  claim 4 , wherein the first portion is directly connected with the second portion. 
     
     
         6 : The IC packaging structure according to  claim 4 , wherein a material composition of the second portion is identical to a material composition of the first portion. 
     
     
         7 : The IC packaging structure according to  claim 4 , wherein a material composition of the second portion is different from a material composition of the first portion. 
     
     
         8 : The IC packaging structure according to  claim 7 , wherein the first portion comprises first metal particles, the second portion comprises second metal particles, and a dimension of each of the second metal particles is larger than a dimension of each of the first metal particles. 
     
     
         9 : The IC packaging structure according to  claim 1 , wherein the encapsulation material comprises an epoxy molding compound (EMC). 
     
     
         10 : A manufacturing method of an integrated circuit (IC) packaging structure, comprising:
 disposing one or a plurality of dies on a packaging substrate;   forming an encapsulation material on the packaging substrate, wherein the encapsulation material is configured to encapsulate the one or the plurality of the dies on the packaging substrate;   forming at least one trench in the encapsulation material; and   forming a heat dissipation structure on the encapsulation material, wherein at least a part of the heat dissipation structure is formed in the at least one trench.   
     
     
         11 : The manufacturing method of the IC packaging structure according to  claim 10 , wherein the step of forming the heat dissipation structure comprises:
 forming a first slurry in the at least one trench; and   performing a first curing process to the first slurry for forming a first portion of the heat dissipation structure.   
     
     
         12 : The manufacturing method of the IC packaging structure according to  claim 11 , wherein the step of forming the heat dissipation structure further comprises:
 forming a second slurry on a surface of the encapsulation material after forming the first slurry in the at least one trench.   
     
     
         13 : The manufacturing method of the IC packaging structure according to  claim 12 , wherein the step of forming the heat dissipation structure further comprises:
 performing a second curing process to the second slurry for forming a second portion of the heat dissipation structure on the surface of the encapsulation material, wherein the second slurry is formed after the first curing process.   
     
     
         14 : The manufacturing method of the IC packaging structure according to  claim 12 , wherein the second slurry is formed before the first curing process, and the second slurry is cured by the first curing process to be a second portion of the heat dissipation structure on the surface of the encapsulation material. 
     
     
         15 : The manufacturing method of the IC packaging structure according to  claim 12 , wherein a material composition of the second slurry is identical to a material composition of the first slurry. 
     
     
         16 : The manufacturing method of the IC packaging structure according to  claim 12 , wherein a material composition of the second slurry is different from a material composition of the first slurry. 
     
     
         17 : The manufacturing method of the IC packaging structure according to  claim 16 , wherein the first slurry comprises first metal particles, the second slurry comprises second metal particles, and a dimension of each of the second metal particles is larger than a dimension of each of the first metal particles. 
     
     
         18 : The manufacturing method of the IC packaging structure according to  claim 10 , further comprising:
 performing a cutting process after the step of forming the heat dissipation structure.   
     
     
         19 : The manufacturing method of the IC packaging structure according to  claim 10 , further comprising:
 performing a cutting process after the step of forming the encapsulation material and before the step of forming the at least one trench.   
     
     
         20 : The manufacturing method of the IC packaging structure according to  claim 10 , wherein a heat transfer coefficient of the heat dissipation structure is higher than a heat transfer coefficient of the encapsulation material.