Etching Method and Etching Apparatus

Abstract

There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

1 - 13 . (canceled) 
     
     
         14 . An etching apparatus comprising:
 a processing container;   a mounting part provided inside the processing container and configured to mount a substrate on the mounting part, the substrate including a silicon-containing film, a porous film, and a film not to be etched which are sequentially formed adjacent to each other;   a film-forming gas supply part configured to supply a film-forming gas into the processing container so as to form a blocking film configured to prevent an etching gas for etching the silicon-containing film from passing through each pore of the porous film and prevent the etching gas from being supplied to the film not to be etched; and   an etching gas supply part configured to supply the etching gas into the processing container.   
     
     
         15 . The etching apparatus of  claim 14 , further comprising: a controller configured to output a control signal such that the supply of the film-forming gas by the film-forming gas supply part and the supply of the etching gas by the etching gas supply part are repeated in this order a plurality of times. 
     
     
         16 . The etching apparatus of  claim 14 , further comprising: a controller configured to output a control signal such that the supply of the etching gas to the substrate and the supply of the film-forming gas to the substrate are performed simultaneously. 
     
     
         17 . The etching apparatus of  claim 14 , wherein the etching gas supply part includes a shower head provided to face the mounting part. 
     
     
         18 . The etching apparatus of  claim 14 , wherein the film-forming gas supply part is configured such that the film-forming gas supplied from the film-forming gas supply part collides with a sidewall of the processing container before reaching the substrate.