Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

Abstract

A semiconductor device including a highly reliable transistor is provided. A semiconductor device includes a transistor. The transistor includes first and second gate electrodes, first and second gate insulators, a source electrode, a drain electrode, first to sixth oxides, first and second layers, and first and second gate insulators. The third oxide is under the source electrode. The fourth oxide is under the drain electrode. The sixth oxide is under the second gate electrode. The third and fourth oxides each have a function of supplying oxygen to the second oxide. The sixth oxide has a function of supplying oxygen to the second gate insulator.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a transistor comprising:
 an oxide semiconductor film comprising a channel region; 
 source and drain electrodes electrically connected to the oxide semiconductor film; 
 a gate electrode overlapping the oxide semiconductor film, 
   wherein the gate electrode comprises an oxide and a conductor overlapping each other.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the oxide comprises a metal oxide. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the gate electrode positioned above the oxide semiconductor film. 
     
     
         4 . A semiconductor device comprising:
 a transistor comprising:
 an oxide semiconductor film comprising a channel region; 
 source and drain electrodes electrically connected to the oxide semiconductor film; 
 a gate electrode overlapping the oxide semiconductor film, 
   wherein the source and drain electrodes each comprise a first oxide and a first conductor overlapping each other, and   wherein the gate electrode comprises a second oxide and a second conductor overlapping each other.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the first oxide and the second oxide each comprise a metal oxide. 
     
     
         6 . The semiconductor device according to  claim 4 , wherein the gate electrode positioned above the oxide semiconductor film. 
     
     
         7 . A semiconductor device comprising:
 a transistor comprising:
 a first gate electrode; 
 an oxide semiconductor film over and overlapping the first gate electrode, the oxide semiconductor film comprising a channel region; 
 source and drain electrodes electrically connected to the oxide semiconductor film; 
 a second gate electrode over and overlapping the oxide semiconductor film, 
   wherein the source and drain electrodes each comprise a first oxide and a first conductor overlapping each other, and   wherein the second gate electrode comprises a second oxide and a second conductor overlapping each other.   
     
     
         8 . The semiconductor device according to  claim 7 , wherein the first oxide and the second oxide each comprise a metal oxide.