US2020227272A1PendingUtilityA1

Interconnect Structure with Porous Low K Film

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Assignee: SEMICONDUCTOR MFG INT BEIJING CORPPriority: Sep 30, 2016Filed: Mar 26, 2020Published: Jul 16, 2020
Est. expirySep 30, 2036(~10.2 yrs left)· nominal 20-yr term from priority
Inventors:Ming Zhou
H10P 14/6902H10P 14/6532H10P 14/6519H10P 14/687H10P 50/287H10P 50/283H10P 50/73H10W 20/4403H10W 20/087H10W 20/081H10W 20/074H10W 20/056H10W 20/47H10W 20/43H10W 20/42H10W 20/071H10P 50/285H01L 21/31138H01L 21/02115H01L 23/528H01L 23/53295H01L 21/76877H01L 21/31144H01L 23/53209H01L 23/5226H01L 21/76829H01L 21/76802H01L 21/76811H01L 21/31122H01L 21/31116
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Claims

Abstract

An interconnect structure includes a metal interconnect layer, a first dielectric layer on the metal interconnect layer, a fluorocarbon layer on the first dielectric layer, a second dielectric layer on the fluorocarbon layer, a trench extending through the second dielectric layer to the fluorocarbon layer, and a through hole in the trench extending to the metal interconnect layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An interconnect structure comprising:
 a metal interconnect layer;   a first dielectric layer on the metal interconnect layer;   a fluorocarbon layer on the first dielectric layer;   a second dielectric layer on the fluorocarbon layer;   a trench extending through the second dielectric layer to the fluorocarbon layer; and   a through hole in the trench extending to the metal interconnect layer.   
     
     
         2 . The interconnect structure of  claim 1 , wherein the through hole comprises a first through hole and a second through hole. 
     
     
         3 . The interconnect structure of  claim 1 , further comprising a metal layer filling the trench and the through hole. 
     
     
         4 . The interconnect structure of  claim 1 , wherein the first and second dielectric layers each comprise a porous low-k dielectric layer. 
     
     
         5 . The interconnect structure of  claim 1 , wherein the fluorocarbon layer is a hydrogen-containing fluorocarbon layer. 
     
     
         6 . The interconnect structure of  claim 1 , further comprising:
 a first hardmask layer comprising SiOCH on the second dielectric layer;   a second hardmask layer comprising TEOS on the first hardmask layer; and   a third hardmask layer comprising TiN on the second hardmask layer.

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