US2020219981A1PendingUtilityA1
Silicon carbide epitaxial substrate
Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Aug 24, 2017Filed: Apr 26, 2018Published: Jul 9, 2020
Est. expiryAug 24, 2037(~11.1 yrs left)· nominal 20-yr term from priority
H10P 14/38H10P 14/24H10P 14/2926H10P 14/2904H10P 14/3408H10D 62/53H10D 62/405H10D 62/8325C30B 29/36H01L 29/045H01L 29/1608
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Claims
Abstract
A silicon carbide epitaxial substrate includes: a silicon carbide single-crystal substrate having a polytype of 4H and having a principal surface inclined at an angle θ from a {0001} plane in a <11-20> direction; and a silicon carbide epitaxial layer provided on the principal surface and having a basal plane dislocation, wherein even when the basal plane dislocation is irradiated with an ultraviolet light having a power of 270 mW and a wavelength of 313 nm for 10 seconds, the basal plane dislocation does not move.
Claims
exact text as granted — not AI-modified1 . A silicon carbide epitaxial substrate comprising:
a silicon carbide single-crystal substrate having a polytype of 4H and having a principal surface inclined at an angle θ from a {0001} plane in a <11-20> direction; and a silicon carbide epitaxial layer provided on the principal surface and having a basal plane dislocation, wherein even when the basal plane dislocation is irradiated with an ultraviolet light having a power of 270 mW and a wavelength of 313 nm for 10 seconds, the basal plane dislocation does not move.
2 . The silicon carbide epitaxial substrate according to claim 1 , wherein a diameter of the silicon carbide single-crystal substrate is greater than or equal to 150 mm.
3 . The silicon carbide epitaxial substrate according to claim 1 , wherein the angle θ is greater than 0° and less than or equal to 6°.Join the waitlist — get patent alerts
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