Apparatus and methods for asymmetric deposition of metal on high aspect ratio nanostructures

Abstract

Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

1 . A process chamber for asymmetric deposition of a material on a structure formed on a substrate, comprising:
 a plasma source configured to form a plasma containing ionized fluorocarbon (CxFy) particles;   a plurality of filter plates each coupled to a voltage source, wherein each of the plurality of filter plates is configured to at least one of filter at least some of the ionized CxFy particles, adjust an angle of some of the ionized CxFy particles, or adjust a speed of some of the ionized CxFy particles; and   a substrate support configured to move laterally.   
     
     
         2 . The process chamber of  claim 1 , wherein the plurality of filter plates includes:
 a first filter plate having a first opening and coupled to a first voltage source;   a second filter plate coupled to a second voltage source and is configured to move laterally within the process chamber; and   a third filter plate coupled to a third voltage source and is configured to move laterally within the process chamber.   
     
     
         3 . The process chamber of  claim 2 , wherein the first filter plate is configured to filter a first set of ionized CxFy particles having a first charge by applying a retarding voltage to the first filter plate. 
     
     
         4 . The process chamber of  claim 3 , wherein the first, second and third filter plates are configured to filter CxFy radicals having a neutral charge by adjusting a positioning of at least one of the first filter plate, the second filter plate, or the third filter plate. 
     
     
         5 . The process chamber of  claim 4 , wherein the second filter plate is configured to adjust an angle of the path of any remaining CxFy ions by applying a first alignment voltage to the second filter plate. 
     
     
         6 . The process chamber of  claim 5 , wherein an angle and/or speed of the remaining CxFy ions is further adjusted by applying a second alignment voltage to the third filter plate. 
     
     
         7 . The process chamber of  claim 1 , wherein the ionized CxFy particles include positive CxFy+ polymer ions, negative CxFy− polymer ions, and CxFy* radicals. 
     
     
         8 . The process chamber of  claim 7 , wherein the process chamber is configured to filter the CxFy− polymer ions by applying a negative retarding potential (−V R ) to a first filter plate. 
     
     
         9 . The process chamber of  claim 7 , wherein the process chamber is configured to filter the CxFy* radicals by adjusting a positioning of at least one of the plurality of filter plates. 
     
     
         10 . The process chamber of  claim 7 , wherein the process chamber is configured to adjust an angle of a path of the CxFy+ ions by applying a positive alignment voltage (+V A ) to at least one of the plurality of filter plates. 
     
     
         11 . The process chamber of  claim 7 , wherein the process chamber is configured to adjust an angle and/or speed of the CxFy+ ions by applying a negative alignment voltage (−V A ) to at least one of the plurality of filter plates. 
     
     
         12 . A process chamber for asymmetric deposition of a material on a structure formed on a substrate, comprising:
 a plasma source configured to form a plasma containing ionized fluorocarbon (CxFy) particles to deposit a CxFy polymer coating on a substrate;   a charged oxygen ion source configured to provide angled charged oxygen ions to remove a portion of the CxFy polymer coating on the substrate;   a plurality of filter plates each coupled to a voltage source, wherein each of the plurality of filter plates is configured to at least one of filter at least some of the charged oxygen ions, adjust an angle of some of the charged oxygen ions, or adjust a speed of some of the charged oxygen ions; and   a substrate support configured to move laterally.   
     
     
         13 . The process chamber of  claim 12 , wherein the oxygen ions include positive oxygen (O+) ions, negative oxygen (O−) ions, and oxygen (O*) radicals. 
     
     
         14 . The process chamber of  claim 13 , wherein the process chamber is configured to filter the O+ ions by applying positive retarding potential (+V R ) to at least one of the plurality of filter plates. 
     
     
         15 . The process chamber of  claim 13 , wherein the process chamber is configured to filter the O* radicals by adjusting a positioning of at least one of the plurality of filter plates. 
     
     
         16 . The process chamber of  claim 13 , wherein the process chamber is configured to adjust an angle of a path of the O− ions by applying a negative alignment voltage (−V A ) to at least one of the plurality of filter plates. 
     
     
         17 . The process chamber of  claim 16 , wherein the process chamber is configured to adjust an angle and/or speed of the O− ions by applying positive alignment voltage (+V A ) to at least one of the plurality of filter plates.