US2020212230A1PendingUtilityA1

Leakage pathway layer for solar cell

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Assignee: SUNPOWER CORPPriority: Mar 30, 2010Filed: Mar 11, 2020Published: Jul 2, 2020
Est. expiryMar 30, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Andy LuanDavid D. SmithPeter John CousinsSheng Sun
H10F 77/315H10F 77/311H10F 10/146H10F 77/935Y02E10/547H01L 31/02168H01L 31/02008H01L 31/02167H01L 31/0682
64
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Claims

Abstract

Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A solar cell, comprising:
 a dielectric layer disposed above a substrate;   a phosphorus-doped silicon layer disposed above the dielectric layer; and   an anti-reflective coating layer disposed above the phosphorus-doped silicon layer.   
     
     
         3 . The solar cell of  claim 2 , wherein the phosphorus-doped silicon layer comprises a morphology selected from the group consisting of nano-crystalline and fine-grained. 
     
     
         4 . The solar cell of  claim 2 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate. 
     
     
         5 . The solar cell of  claim 2 , wherein the dielectric layer has a thickness in the range of 35-45 Angstroms. 
     
     
         6 . The solar cell of  claim 2 , wherein the anti-reflective coating layer has a thickness in the range of 70-80 nanometers. 
     
     
         7 . The solar cell of  claim 2 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate. 
     
     
         8 . The solar cell of  claim 2 , wherein the dielectric layer is a silicon dioxide dielectric layer. 
     
     
         9 . A solar cell, comprising:
 a dielectric layer disposed above a substrate;   a boron-doped silicon layer disposed above the dielectric layer; and   an anti-reflective coating layer disposed above the boron-doped silicon layer.   
     
     
         10 . The solar cell of  claim 9 , wherein the boron-doped silicon layer comprises a morphology selected from the group consisting of nano-crystalline and fine-grained. 
     
     
         11 . The solar cell of  claim 9 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate. 
     
     
         12 . The solar cell of  claim 9 , wherein the dielectric layer has a thickness approximately in the range of 35-45 Angstroms. 
     
     
         13 . The solar cell of  claim 9 , wherein the anti-reflective coating layer has a thickness approximately in the range of 70-80 nanometers. 
     
     
         14 . The solar cell of  claim 9 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate. 
     
     
         15 . The solar cell of  claim 9 , wherein the dielectric layer is a silicon dioxide dielectric layer. 
     
     
         16 . A solar cell, comprising:
 a silicon dioxide dielectric layer disposed above a substrate;   a doped silicon layer disposed above the dielectric layer, wherein the doped silicon layer comprises a morphology selected from the group consisting of nano-crystalline and fine-grained; and   an anti-reflective coating layer disposed above the phosphorus-doped silicon layer.   
     
     
         17 . The solar cell of  claim 16 , wherein the doped silicon layer comprises a dopant selected from the group consisting of boron and phosphorus. 
     
     
         18 . The solar cell of  claim 16 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate. 
     
     
         19 . The solar cell of  claim 16 , wherein the dielectric layer has a thickness approximately in the range of 35-45 Angstroms. 
     
     
         20 . The solar cell of  claim 16 , wherein the anti-reflective coating layer has a thickness approximately in the range of 70-80 nanometers. 
     
     
         21 . The solar cell of  claim 16 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate.

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