Electrically conductive - semitransparent solid state infrared emitter apparatus and method of use thereof

Abstract

The invention comprises a solid state infrared source and method of use thereof comprising: (1) an electrically conductive film, comprising a semi-transparent material, the semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from the electrically conductive film transmit to an outer surface of the electrically conductive film, wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers; (2) a first silicon nitride layer; and (3) a second silicon nitride layer, the electrically conductive film positioned between the first silicon nitride layer and the second silicon nitride layer, where applying an electric current of less than one Watt through the electrically conductive film raises a temperature of the electrically conductive film to in excess of eight hundred degrees centigrade in less than twenty milliseconds resultant in the infrared emissions.

1 . An apparatus, comprising:
 a solid state source, comprising:
 an electrically conductive film, comprising a semi-transparent material, said semi-transparent material comprising a transmission property of at least forty percent, wherein at least forty percent of internal infrared emissions from said electrically conductive film transmit to an outer surface of said electrically conductive film, 
 wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers. 
   
     
     
         2 . The apparatus of  claim 1 , said solid state source further comprising:
 a first silicon nitride film; and   a second silicon nitride film, said electrically conductive film both positioned between and substantially contacting said first silicon nitride film and said second silicon nitride film.   
     
     
         3 . The apparatus of  claim 2 , said electrically conductive film comprising:
 a metal oxide; and   a thickness of less than three micrometers.   
     
     
         4 . The apparatus of  claim 2 , said electrically conductive film comprising:
 at least ninety-five percent zinc oxide, said semi-transparent material comprising zinc oxide.   
     
     
         5 . The apparatus of  claim 4 , said solid state source further comprising:
 a layer of metal oxide crystals separated by gaps, a first mean minimum cross-section of said metal oxide crystals of less than one hundred micrometers, a second mean minimum cross-section of the gaps of less than fifty micrometers.   
     
     
         6 . The apparatus of  claim 5 , said metal oxide crystals comprising:
 at least fifty percent zinc oxide.   
     
     
         7 . The apparatus of  claim 5 , further comprising:
 a filler material filling a subset of said gaps proximate an emission surface of said layer of metal oxide crystals, said filler material comprising an index of refraction greater than 1.4.   
     
     
         8 . The apparatus of  claim 2 , said solid state source further comprising:
 a silicon substrate;   a silicon dioxide side of said silicon substrate; and   a reflective layer between said silicon dioxide side of said silicon substrate and said electrically conductive film.   
     
     
         9 . The apparatus of  claim 8 , further comprising:
 a third silicon nitride film comprising an indention therein, said reflective layer positioned in said indention.   
     
     
         10 . A method, comprising the steps of:
 providing a solid state source, comprising:
 an electrically conductive film, comprising a semi-transparent material; 
   transmitting at least forty percent of internal infrared emissions from a center of said semi-transparent material to an outer surface of said electrically conductive film,   wherein the infrared emissions comprise a peak intensity between 3.9 and 6 micrometers.   
     
     
         11 . The method of  claim 10 , further comprising the step of:
 applying a pulsed current to said electrically conductive film resulting in heating of said electrically conductive film to 700 to 1300 degrees centigrade with less than 1.5 Watts.   
     
     
         12 . The method of  claim 11 , further comprising the step of:
 isolating the pulsed current into said electrically conductive film by sealing a length and width of said electrically conductive film between a first dielectric layer and a second dielectric layer.   
     
     
         13 . The method of  claim 12 , further comprising the step of:
 reflecting the infrared emissions off of a reflective layer, said reflective layer positioned in said solid state source between said first dielectric layer and a support matrix of silicon.   
     
     
         14 . The method of  claim 13 , further comprising the steps of:
 thermally conducting heat, resultant from application of said pulsed current, from said electrically conductive film, through said second dielectric layer to a nanoparticle layer of zinc oxide particles; and   said zinc oxide particles emitting a second set of infrared photons.   
     
     
         15 . The method of  claim 14 , further comprising the step of:
 dissipating heat from said electrically conductive film, between peak intensities of the pulsed current, through said first dielectric layer comprising a first thickness of less than five micrometers and said second dielectric layer comprising a second thickness of less than five micrometers.