Micro light emitting diode and manufacturing method thereof

Abstract

A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

What is claimed is: 
     
         1 . A manufacturing method of a micro light emitting diode, comprising:
 providing a growth substrate;   forming a plurality of micro lighting units on the growth substrate, a portion of the growth substrate being exposed by a gap located between two adjacent ones of the micro lighting units, wherein each of the micro lighting units comprises an epitaxial stacked layer disposed on the substrate and at least two electrodes disposed on a top side of the epitaxial stacked layer and electrically connected thereto;   providing an external circuit base having a plurality of predetermined bonding pads thereon;   performing a bonding process to connect the electrodes of each of the micro lighting units to the predetermined bonding pads on the external circuit base; and   removing the growth substrate apart away the micro lighting units.