Method for depositing metal oxide film in liquid environment

Abstract

A method for depositing a metal oxide film in a liquid environment is provided, and includes steps of: dissolving an oxidizing agent in solvent with hydrogen bond to form a solution, and placing a substrate into the solution for performing a deposition reaction to deposit a metal oxide hydroxide film on the substrate. The oxidizing agent is potassium permanganate, potassium chromate, or potassium dichromate, a reaction temperature of the deposition reaction ranges from 1 to 99 degrees Celsius, and a reaction pressure environment of the deposition reaction is an atmospheric pressure environment.

What is claimed is: 
     
         1 . A method of depositing a metal oxide film in a liquid environment, comprising steps of:
 (S1) dissolving an oxidizing agent in a solvent with hydrogen bonds to form a solution; and   (S2) placing a substrate into the solution for performing a deposition reaction to deposit a metal oxide hydroxide film on the substrate;   wherein the oxidizing agent is potassium permanganate, potassium chromate, or potassium dichromate, a reaction temperature of the deposition reaction ranges from 1 to 99 degrees Celsius, and a reaction pressure environment of the deposition reaction is an atmospheric pressure environment.   
     
     
         2 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 1 , wherein in the step (S1), further comprises a step of mixing a reducing agent and the oxidizing agent based on a molar ratio of the reducing agent to the oxidizing agent, in order to dissolve the oxidizing agent and the oxidizing agent in the solvent with hydrogen bonds to form the solution. 
     
     
         3 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 2 , wherein the reducing agent is selected from the group consisting of a divalent cobalt compound, a divalent iron compound, a divalent nickel compound, a divalent manganese compound, and a first transition metal ionic compound. 
     
     
         4 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 2 , wherein the molar ratio of the reducing agent to the oxidizing agent ranges from 9:1 to 1:3. 
     
     
         5 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 1 , wherein in the step (S1), further comprises a step of adding an additive containing an anion into the solution, wherein the anion of the additive is selected from metal salt ions. 
     
     
         6 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 1 , further comprising a step (S3) after the step (S2), wherein the step (S3) comprises: causing the metal oxide hydroxide film to be calcined by a calcination process in a calcination temperature range and under a gas environment to produce a calcined metal oxide film, wherein the calcination temperature ranges from 250 to 800 degrees Celsius. 
     
     
         7 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 6 , wherein the gas in the gas environment is air in an atmospheric environment. 
     
     
         8 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 6 , wherein the gas in the gas environment is argon, nitrogen, or oxygen. 
     
     
         9 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 6 , wherein a duration of the calcination process ranges from 1 to 12 hours. 
     
     
         10 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 1 , wherein the substrate is selected from a group consisting of silicon crystal, carbohydrate, glass, nickel foam, metal, metal oxide, organic matter, organic polymer, carbon material, and glassy carbon electrode. 
     
     
         11 . The method of depositing the metal oxide film in the liquid environment as claimed in  claim 1 , wherein the solvent with hydrogen bonds is deionized water with an impedance of 18.2 MΩ·cm.