US2020180269A1PendingUtilityA1

Method for making graphene adhesive film and method for transferring graphene

Assignee: UNIV TSINGHUAPriority: Dec 6, 2018Filed: Mar 12, 2019Published: Jun 11, 2020
Est. expiryDec 6, 2038(~12.4 yrs left)· nominal 20-yr term from priority
C01B 32/194C01B 32/184B32B 7/12B32B 9/007B32B 15/082
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Claims

Abstract

A method for making a graphene adhesive film includes the following steps: growing a graphene on a growth substrate, wherein the material of the growth substrate is copper; depositing an adhesive layer on a surface of the graphene away from the growth substrate, to form an adhesive/graphene/growth substrate composite structure; and removing the growth substrate from the adhesive/graphene/growth substrate composite structure with an etching solution, wherein the etching solution is a mixture of hydrogen peroxide, hydrochloric acid, and deionized water.

Claims

exact text as granted — not AI-modified
1 . A method for making a graphene adhesive film, and the method comprising:
 growing a graphene on a growth substrate, wherein the growth substrate is a copper sheet;   depositing an adhesive layer on a surface of the graphene away from the growth substrate, to form an adhesive/graphene/growth substrate composite structure; and   removing the growth substrate from the adhesive/graphene/growth substrate composite structure by etching the growth substrate by an etching solution, wherein the etching solution is a mixture of hydrogen peroxide, hydrochloric acid, and deionized water; and a volume ratio of the hydrogen peroxide (H 2 O 2 ), the hydrochloric acid (HCL), and the deionized water (DIW) is about: H 2 O 2 :HCL:DIW=1:1:50.   
     
     
         2 - 3 . (canceled) 
     
     
         4 . The method of  claim 1 , wherein the method of removing the growth substrate from the adhesive/graphene/growth substrate composite structure comprises:
 placing the etching solution in a container comprising an opening and a bottom surface, wherein the opening is opposite to the bottom surface;   placing the adhesive/graphene/growth substrate composite structure in the etching solution, wherein the adhesive layer faces the opening of the container, and the growth substrate faces the bottom surface of the container and the growth substrate is immersed in the etching solution;   keeping the adhesive/graphene/growth substrate composite structure in the etching solution until the growth substrate is etched, leaving the graphene with the adhesive layer floating on the etching solution; and   removing the graphene with the adhesive layer from the etching solution.   
     
     
         5 . The method of  claim 4 , wherein the method of placing the adhesive/graphene/growth substrate composite structure in the etching solution is performed by suspending the adhesive/graphene/growth substrate composite structure in the etching solution with the adhesive layer gravitationally facing up. 
     
     
         6 . The method of  claim 4 , wherein the step of removing the growth substrate from the adhesive/graphene/growth substrate composite structure further comprises removing air bubbles in the etching solution before placing the adhesive/graphene/growth substrate composite structure in the etching solution. 
     
     
         7 . The method of  claim 6 , wherein the method of removing air bubbles in the etching solution is using a dropper to drive the air bubbles out of the etching solution. 
     
     
         8 . A method for transferring a graphene, and the method comprising:
 growing a graphene on a growth substrate, wherein the growth substrate is a copper sheet;   depositing an adhesive layer on a surface of the graphene away from the growth substrate, to form an adhesive/graphene/growth substrate composite structure;   removing the growth substrate from the adhesive/graphene/growth substrate composite structure by etching the growth substrate by an etching solution, to form an adhesive/graphene composite structure, wherein the etching solution is a mixture of hydrogen peroxide, hydrochloric acid, and deionized water; and a volume ratio of the hydrogen peroxide (H 2 O 7 ), the hydrochloric acid (HCL), and the deionized water (DIW) is about: H 2 O 2 :HCL:DIW= 1 : 1 : 50 ;   placing the adhesive/graphene composite structure on a target substrate, wherein the graphene is between the target substrate and the adhesive layer; and   removing the adhesive layer.   
     
     
         9 - 10 . (canceled) 
     
     
         11 . The method of  claim 8 , wherein the method of removing the growth substrate from the adhesive/graphene/growth substrate composite structure comprises:
 placing the etching solution in a container comprising an opening and a bottom surface, wherein the opening is opposite to the bottom surface;   placing the adhesive/graphene/growth substrate composite structure in the etching solution, wherein the adhesive layer faces the opening of the container, and the growth substrate faces the bottom surface of the container and the growth substrate is immersed in the etching solution;   keeping the adhesive/graphene/growth substrate composite structure in the etching solution until the growth substrate is etched, leaving a graphene with the adhesive film floating on a surface of the etching solution; and   removing the graphene with the adhesive film from the etching solution.   
     
     
         12 . The method of  claim 11 , wherein the method of placing the adhesive/graphene/growth substrate composite structure in the etching solution is performed by suspending the adhesive/graphene/growth substrate composite structure in the etching solution with the adhesive layer gravitationally facing up. 
     
     
         13 . The method of  claim 11 , the method of removing the growth substrate from the adhesive/graphene/growth substrate composite structure further comprises removing air bubbles in the etching solution, before placing the adhesive/graphene/growth substrate composite structure in the etching solution. 
     
     
         14 . The method of  claim 13 , wherein the method of removing air bubbles of the etching solution is using a dropper to drive the air bubbles out of the etching solution.

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