Silicon wafer

Abstract

A silicon wafer is capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer according to the present invention is a silicon wafer in which there is formed a multilayered film constituting a semiconductor device layer on one main surface thereof in a device process, which is warped in a bowl shape due to an isotropic film stress of the multilayered film, and which has a (111) plane orientation.

1 . A silicon wafer in which there is formed a multilayered film constituting a semiconductor device layer on one main surface thereof in a device process, which is warped in a bowl shape due to an isotropic film stress of the multilayered film, and which has a (111) plane orientation. 
     
     
         2 . The silicon wafer as claimed in  claim 1 , wherein the oxygen concentration of the silicon wafer is 8.0×10 17  atoms/cm 3  or more (ASTM F-121, 1979). 
     
     
         3 . The silicon wafer as claimed in  claim 1 , wherein the semiconductor device layer includes a 3DNAND flash memory. 
     
     
         4 . A silicon wafer in which there is formed a multilayered film constituting a semiconductor device layer on one main surface thereof in a device process, which is warped in a saddle shape due to an anisotropic film stress of the multilayered film, and which has a (110) plane orientation and a <111> notch orientation. 
     
     
         5 . The silicon wafer as claimed in  claim 4 , wherein the oxygen concentration of the silicon wafer is 6.0×10 17  atoms/cm 3  or more (ASTM F-121, 1979). 
     
     
         6 . The silicon wafer as claimed in  claim 4 , wherein the semiconductor device layer includes a 3DNAND flash memory.