Etching device and operating method thereof

Abstract

A device includes a chamber, a wafer holder, a gas source, a vacuum sealing device, and an inductive coil. The wafer holder is disposed in the chamber. The wafer holder has a wafer-mounting surface in parallel with a gravity direction. The gas source is configured to generate gas. The vacuum sealing device is connected between the gas source and the chamber. The inductive coil is wound around the vacuum sealing device to excite the gas into plasma.

What is claimed is: 
     
         1 . A method, comprising:
 disposing a wafer on a wafer-mounting surface of a wafer holder that is disposed in a chamber, wherein the wafer-mounting surface is in parallel with a gravity direction;   flowing gas from a gas source to a vacuum sealing device, wherein an inductive coil wrapping around a vacuum sealing device excites the gas into plasma; and   injecting the plasma to the wafer.   
     
     
         2 . The method of  claim 1 , further comprising:
 performing a purging operation through at least one exhaust pipe connected to the chamber, while the wafer is disposed on the wafer holder.   
     
     
         3 . The method of  claim 1 , further comprising:
 removing the wafer; and   performing a clean operation after removing the wafer.   
     
     
         4 . The method of  claim 3 , wherein performing the clean operation further comprises:
 performing a purging operation through an exhaust pipe connected to a first end and a second end of the vacuum sealing device; and   disposing a blocking membrane between the vacuum sealing device and the chamber, such that the vacuum sealing device is separate from the chamber.   
     
     
         5 . The method of  claim 4 , wherein the exhaust pipe and the vacuum sealing device are made of ceramic materials. 
     
     
         6 . A device, comprising:
 a chamber;   a wafer holder disposed in the chamber, wherein the wafer holder has a wafer-mounting surface in parallel with a gravity direction;   a gas source configured to generate gas;   a vacuum sealing device connected between the gas source and the chamber; and   an inductive coil wound around the vacuum sealing device to excite the gas into plasma.   
     
     
         7 . The device of  claim 6 , wherein the wafer holder has a chuck pin configured to fix a wafer on the wafer-mounting surface of the wafer holder. 
     
     
         8 . The device of  claim 6 , wherein the wafer holder has an electrostatic chuck configured to fix a wafer on the wafer-mounting surface of the wafer holder. 
     
     
         9 . The device of  claim 6 , further comprising:
 at least one exhaust pipe connected to the chamber.   
     
     
         10 . The device of  claim 6 , further comprising:
 an exhaust pipe connected to a first end and a second end of the vacuum sealing device; and   a blocking membrane disposed between the vacuum sealing device and the chamber.   
     
     
         11 . The device of  claim 10 , wherein the exhaust pipe is Y-shaped. 
     
     
         12 . The device of  claim 10 , wherein the exhaust pipe is made of a ceramic material. 
     
     
         13 . The device of  claim 6 , wherein the wafer holder comprises a heater. 
     
     
         14 . The device of  claim 6 , wherein the vacuum sealing device is made of a ceramic material. 
     
     
         15 . The device of  claim 6 , wherein the vacuum sealing device is a diamond shape, a round shape, or a semicircular shape.