Semiconductor devices and methods of fabricating the same

Abstract

A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first conductor disposed on a substrate;   a first contact disposed on the first conductor;   a second contact disposed on the substrate and spaced apart from the first conductor and the first contact; and   a third contact directly disposed on the first and second contacts and connecting the first and second contacts to each other.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first to third contacts are disposed in an insulating layer. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first and second contacts are disposed in an insulating layer and the third contact is disposed on the insulating layer. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising:
 a via disposed on the third contact; and   a metal line disposed on the via.   
     
     
         5 . The semiconductor device of  claim 4 , wherein an upper surface of the third contact is coplanar with an upper surface of each of the first and second contacts. 
     
     
         6 . The semiconductor device of  claim 4 , wherein a bottom surface of the third contact is coplanar with an upper surface of each of the first and second contacts. 
     
     
         7 . The semiconductor device of  claim 1 , further comprising:
 a second conductor disposed on the substrate, wherein the second contact is disposed between the first and second conductors.   
     
     
         8 . The semiconductor device of  claim 1 , wherein the first conductor is a gate electrode and the first to third contacts are conductive structures. 
     
     
         9 . A semiconductor device, comprising:
 a first trench silicide disposed on a substrate;   a first contact disposed on an upper surface of the first trench silicide, wherein the upper surface of the first trench silicide is wider than a lower surface of the first contact;   a second trench silicide disposed on the substrate;   a second contact disposed on the second trench silicide; and   a third contact directly disposed on the first and second contacts and connecting the first and second contacts to each other.   
     
     
         10 . The semiconductor device of  claim 9 , wherein the first to third contacts are disposed in an insulating layer. 
     
     
         11 . A semiconductor device, comprising:
 a first contact disposed on a substrate and extending lengthwise in a first direction;   a second contact disposed on the substrate and extending lengthwise in the first direction;   a conductor disposed between the first and second contacts and extending lengthwise in the first direction; and   a third contact disposed on the first and second contacts and extending lengthwise in a second direction crossing the first direction, wherein a first portion of the third contact protrudes beyond an edge of the first contact such that the first contact is disposed between the first portion and the conductor in the second direction.   
     
     
         12 . The semiconductor device of  claim 11 , wherein a second portion of the third contact protrudes beyond an edge of the second contact such that the second contact is disposed between the second portion and the conductor in the second direction. 
     
     
         13 . The semiconductor device of  claim 11 , wherein the width of the bottom surface of the third contact in the second direction is greater than the width from a leftmost edge of the first contact to a rightmost edge of the second contact in the second direction. 
     
     
         14 . The semiconductor device of  claim 11 , wherein the first and second contacts are disposed in an insulating layer and the third contact is disposed on the insulating layer.