Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Abstract

A mask blank is provided which comprises a transparent substrate, an etching mask formed on the transparent substrate, and a light shielding film formed on the etching mask film. The mask blank may also include a light-semitransmissive film formed between the transparent substrate and the etching mask film. The etching mask film contains chromium and carbon, and the light shielding film contains chromium and oxygen. A C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV.

What is claimed is: 
     
         1 . A mask blank comprising:
 a transparent substrate;   an etching mask film formed on the transparent substrate; and   a light shielding film formed on the etching mask film,   wherein the etching mask film contains chromium and carbon, and   wherein a C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV, and   wherein the light shielding film contains chromium and oxygen.   
     
     
         2 . The mask blank according to  claim 1 , wherein the total content of oxygen and nitrogen in the etching mask film is 5 atom % or less. 
     
     
         3 . The mask blank according to  claim 1 , wherein the oxygen content in the light shielding film is 10 atom % or more. 
     
     
         4 . The mask blank according to  claim 1 , wherein a O1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis is not more than the detection lower limit. 
     
     
         5 . The mask blank according to  claim 1 , wherein a N1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis is not more than the detection lower limit. 
     
     
         6 . The mask blank according to  claim 1 , wherein a thickness of the etching mask film is 14 nm or less. 
     
     
         7 . The mask blank according to  claim 1 , wherein a light-semitransmissive film is provided between the transparent substrate and the etching mask film. 
     
     
         8 . The mask blank according to  claim 7 , wherein the light-semitransmissive film contains silicon and nitrogen. 
     
     
         9 . A transfer mask comprising:
 a transparent substrate;   an etching mask film formed on the transparent substrate; and   a light shielding film formed on the etching mask film,   wherein the transparent substrate has a transfer pattern that comprises an etching pattern, and   wherein the etching mask film and the light shielding film have a light shielding band pattern, and   wherein the etching mask film contains chromium and carbon, and   wherein a C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV, and   wherein the light shielding film contains chromium and oxygen.   
     
     
         10 . The transfer mask according to  claim 9 , wherein the total content of oxygen and nitrogen in the etching mask film is 5 atom % or less. 
     
     
         11 . The transfer mask according to  claim 9 , wherein the oxygen content in the light shielding film is 10 atom % or more. 
     
     
         12 . The transfer mask according to  claim 9 , wherein a O1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis is not more than the detection lower limit. 
     
     
         13 . The transfer mask according to  claim 9 , wherein a N1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis is not more than the detection lower limit. 
     
     
         14 . A transfer mask comprising:
 a transparent substrate;   a light-semitransmissive film formed on the transparent substrate;   an etching mask film formed on the light-semitransmissive film; and   a light shielding film formed on the etching mask film,   wherein the light-semitransmissive film has a transfer pattern, and   wherein the etching mask film and the light shielding film have a light shielding band pattern, and   wherein the light-semitransmissive film contains silicon, and   wherein the etching mask film contains chromium and carbon, and   wherein a C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV, and   wherein the light shielding film contains chromium and oxygen.   
     
     
         15 . The transfer mask according to  claim 14 , wherein the total content of oxygen and nitrogen in the etching mask film is 5 atom % or less. 
     
     
         16 . The transfer mask according to  claim 14 , wherein the oxygen content in the light shielding film is 10 atom % or more. 
     
     
         17 . The transfer mask according to  claim 14 , wherein a O1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis is not more than the detection lower limit. 
     
     
         18 . The transfer mask according to  claim 14 , wherein a N1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis is not more than the detection lower limit. 
     
     
         19 . A method for manufacturing a semiconductor device, comprising an exposure transfer in which the transfer mask according to  claim 9  is used to transfer the transfer pattern onto a semiconductor substrate by a lithographic method. 
     
     
         20 . A method for manufacturing a semiconductor device, comprising an exposure transfer in which the transfer mask according to  claim 14  is used to transfer the transfer pattern onto a semiconductor substrate by a lithographic method.