Polycrystalline diamond compact with sintering aid compound, a compound formed from a sintering aid compound, or a mixture thereof
Abstract
The present disclosure provides a polycrystalline diamond compact (PDC) including a substrate and a polycrystalline diamond table including a sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and further including dissociated sintering aid. The disclosure further provides an earth-boring drill bit containing a bit body and the PDC in the form of a cutter. The disclosure also provides a method of forming a PDC including placing a substrate and a mixture of diamond grains and a sintering aid compound in a can and performing an HTHP process to form a PDC including the substrate and a polycrystalline diamond table formed from the diamond grains and the sintering aid compound and including the sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and dissociated sintering aid.
Claims
exact text as granted — not AI-modified1 . A polycrystalline diamond compact (PDC) comprising:
a substrate; and a polycrystalline diamond table including a sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and further including dissociated sintering aid.
2 . The PDC of claim 1 , wherein the substrate does not comprise a sintering aid.
3 . The PDC of claim 1 , wherein the sintering aid compound comprises a sintering aid component M 1 and a non-sintering aid component M 2 Q and has the general formula M 1 x M 2 y Q p , wherein
M 1 is a Group VIII metal, M 2 is a metal, Q is a non-metal, metalloid, or a combination of at least two non-metals or metalloids, x>0, y≥0, p>0, and x, y and p are such that the sintering aid compound is electroneutral.
4 . The PDC of claim 1 , wherein the derivative compound is formed from the dissociated non-sintering aid component.
5 . The PDC of claim 1 , wherein the derivative compound is a metal carbide.
6 . The PDC of claim 1 , wherein each of the sintering aid compound, dissociated non-sintering aid component, and derivative compound has a linear coefficient of thermal expansion (CTE) of 5×10 −6 /K or less.
7 . An earth-boring drill bit comprising:
a bit body; and a polycrystalline diamond compact (PDC) in the form of a cutter, the PDC comprising:
a substrate; and
a polycrystalline diamond table including a sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and further including dissociated sintering aid.
8 . The earth-boring drill bit of claim 1 , wherein the substrate does not comprise a sintering aid.
9 . The earth-boring drill bit of claim 1 , wherein the sintering aid compound comprises a sintering aid component M 1 and a non-sintering aid component M 2 Q and has the general formula M 1 x M 2 y Q p , wherein
M 1 is a Group VIII metal, M 2 is a metal other than M 1 , Q is a non-metal, metalloid, or a combination of at least two non-metals or metalloids, x>0, y≥0, p>0, and x, y and p are such that the sintering aid compound is electroneutral.
10 . The earth-boring drill bit of claim 1 , wherein the derivative compound is formed from the dissociated non-sintering aid component.
11 . The earth-boring drill bit of claim 1 , wherein the derivative compound is a metal carbide.
12 . The earth-boring drill bit of claim 1 , wherein each of the sintering aid compound, dissociated non-sintering aid component, and derivative compound has a linear coefficient of thermal expansion (CTE) of 5×10 −6 /K or less.
13 . A method of forming a polycrystalline diamond compact (PDC) comprising:
placing a substrate and a mixture of diamond grains and a sintering aid compound in a can to form a sintering assembly; and performing a high temperature high pressure (HTHP) process on the sintering assembly to form a PDC including the substrate and a polycrystalline diamond table formed from the diamond grains and the sintering aid compound and including the sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and further including dissociated sintering aid.
14 . The method of claim 13 , wherein the sintering aid compound is in the form of particles and the mixture of diamond grains and sintering aid compound is homogeneous.
15 . The method of claim 13 , wherein the sintering aid compound is in the form of particles having an average largest dimension within 5% of an average largest dimension of the diamond grains.
16 . The method of claim 13 , wherein the sintering aid compound dissociates into a sintering aid component and a non-sintering component during the HTHP process, such that the sintering aid component catalyzes the formation of diamond-diamond bonds between the diamond grains.
17 . The method of claim 13 , wherein the sintering aid compound comprises at least two compounds.
18 . The method of claim 17 , wherein each of the at least two compounds comprises the same sintering aid.
19 . The method of claim 17 , wherein each of the at least two compounds comprises a different sintering aid and wherein the sintering aids form an alloy during the HTHP process.
20 . The method of claim 13 , wherein the dissociated non-sintering component reacts with carbon to form a metal carbide derivative compound.Join the waitlist — get patent alerts
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