Substrate processing apparatus

Abstract

A substrate processing apparatus includes: a removing part configured to remove liquid droplets present in a recess; a drain hole located at the bottom of the recess of a nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and a controller configured to control the discharge state of a gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach a surface to be processed of the substrate, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.

What is claimed is: 
     
         1 . A substrate processing apparatus, comprising:
 a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed;   a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed;   a gas discharge nozzle provided to the nozzle head and configured to discharge a gas to the surface to be processed;   a removing part configured to remove liquid droplets present in the recess;   a drain part located at a bottom of the recess of the nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess, wherein   the removing part is a nozzle that is formed to protrude from a surface of the nozzle head, and configured to discharge a gas to the surface to be processed, and   the nozzle includes a hole that allows the gas to be discharged toward the recess in a direction perpendicular to discharge direction of the gas.   
     
     
         2 . A substrate processing apparatus, comprising:
 a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed;   a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed;   a gas discharge nozzle provided to the nozzle head and configured to discharge a gas to the surface to be processed;   a removing part configured to remove liquid droplets present in the recess;   a drain part located at a bottom of the recess of the nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess, wherein   the removing part includes a discharge port that is located in a surface of the recess, and configured to discharge a removing material toward the drain part located at the bottom to remove the liquid droplets present in the recess.   
     
     
         3 . The substrate processing apparatus according to  claim 1 , further comprising a vibrator configured to vibrate the nozzle head. 
     
     
         4 . The substrate processing apparatus according to  claim 1 , further comprising a heater configured to heat the nozzle head. 
     
     
         5 . The substrate processing apparatus according to  claim 1 , further comprising a suction part connected to the drain part, and configured to suck liquid droplets of the treatment liquid present in the recess. 
     
     
         6 . The substrate processing apparatus according to  claim 1 , wherein a surface of the recess of the nozzle head is roughened to avoid retention of liquid droplets to be removed. 
     
     
         7 . The substrate processing apparatus according to  claim 1 , wherein a porous material is applied to a surface of the recess of the nozzle head. 
     
     
         8 . The substrate processing apparatus according to  claim 1 , wherein the recess of the nozzle head is made of a porous material. 
     
     
         9 . The substrate processing apparatus according to  claim 2 , wherein the discharge port is formed annularly in the surface of the recess. 
     
     
         10 . The substrate processing apparatus according to  claim 2 , wherein
 the discharge port is located in an upper portion of the recess, and is arranged in an orientation which is perpendicular to a line that connects the discharge port and the drain part with a shortest distance, and   the removing material can be discharged along the surface of the recess.   
     
     
         11 . The substrate processing apparatus according to  claim 2 , wherein the recess includes a groove that is formed to connect an upper portion of the recess and the drain part with a shortest distance. 
     
     
         12 . The substrate processing apparatus according to  claim 2 , wherein the recess includes a groove that is formed in a spiral shape extending from an upper portion of the recess to the drain part. 
     
     
         13 . The substrate processing apparatus according to  claim 12 , wherein the groove formed in a spiral shape winds in the same direction as rotation direction of the substrate on which treatment is being performed.