Substrate processing apparatus

Abstract

A substrate processing apparatus includes: a removing part configured to remove liquid droplets present in a recess; a drain hole located at the bottom of the recess of a nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and a controller configured to control the discharge state of a gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach a surface to be processed of the substrate, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.

What is claimed is: 
     
         1 . A substrate processing apparatus, comprising:
 a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed;   a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed;   a gas discharge nozzle provided to the nozzle head and configured to discharge a gas to the surface to be processed;   a gas supply source;   an air supply pipe connecting the gas supply source and the gas discharge nozzle;   a flow rate control valve provided to the air supply pipe;   a drain part located at a bottom of the recess of the nozzle head; and   a controller, wherein   the controller is configured to control the flow rate control valve to switch the flow rate of the gas discharged from the gas discharge nozzle between first flow rate and second flow rate,   the first flow rate is a flow rate at which the gas discharged from the gas discharge nozzle does not reach the surface to be processed of the substrate, while the second flow rate is a flow rate at which the gas discharged from the gas discharge nozzle reaches the surface to be processed, and   the controller is further configured to control the flow rate control valve such that
 there is a period in which the gas is discharged from the gas discharge nozzle at the first flow rate in a period from the end of rinsing process for the surface to be processed using the treatment liquid to the start of drying process for the surface to be processed using the gas, and 
 the gas is discharged from the gas discharge nozzle at the second flow rate during the drying process. 
   
     
     
         2 . The substrate processing apparatus according to  claim 1 , wherein
 the gas discharge nozzle is a nozzle that is formed to protrude from a surface of the nozzle head, and configured to discharge a gas to the surface to be processed, and   the nozzle includes a hole that allows the gas to be discharged toward the recess in a direction perpendicular to discharge direction of the gas.   
     
     
         3 . The substrate processing apparatus according to  claim 1 , further comprising a cover located between the nozzle head and the substrate, wherein
 the cover has an opening that the gas passes, and is configured to let the gas discharged from the gas discharge nozzle of the nozzle head pass through the opening to perform treatment on the surface to be processed.   
     
     
         4 . The substrate processing apparatus according to  claim 1 , wherein
 a discharge port is located in a surface of the recess, and   a removing material is discharged toward the drain part located at the bottom to remove liquid droplets present in the recess.   
     
     
         5 . The substrate processing apparatus according to  claim 4 , wherein the discharge port is formed annularly in the surface of the recess. 
     
     
         6 . The substrate processing apparatus according to  claim 4 , wherein
 the discharge port is located in an upper portion of the recess, and is arranged in an orientation which is perpendicular to a line that connects the discharge port and the drain part with a shortest distance, and   the removing material can be discharged along the surface of the recess.   
     
     
         7 . The substrate processing apparatus according to  claim 1 , further comprising a vibrator configured to vibrate the nozzle head. 
     
     
         8 . The substrate processing apparatus according to  claim 1 , further comprising a heater configured to heat the nozzle head. 
     
     
         9 . The substrate processing apparatus according to  claim 1 , further comprising a suction part connected to the drain part, and configured to suck liquid droplets of the treatment liquid present in the recess. 
     
     
         10 . The substrate processing apparatus according to  claim 1 , wherein the recess includes a groove that is formed to connect an upper portion of the recess and the drain part with a shortest distance. 
     
     
         11 . The substrate processing apparatus according to  claim 1 , wherein the recess includes a groove that is formed in a spiral shape extending from an upper portion of the recess to the drain part. 
     
     
         12 . The substrate processing apparatus according to  claim 11 , wherein the groove formed in a spiral shape winds in the same direction as rotation direction of the substrate on which treatment is being performed. 
     
     
         13 . The substrate processing apparatus according to  claim 1 , wherein a surface of the recess of the nozzle head is roughened to avoid retention of liquid droplets to be removed. 
     
     
         14 . The substrate processing apparatus according to  claim 1 , wherein a porous material is applied to a surface of the recess of the nozzle head. 
     
     
         15 . The substrate processing apparatus according to  claim 1 , wherein the recess of the nozzle head is formed of a porous material.