US2020095699A1PendingUtilityA1

Copper sulfate, copper sulfate solution, plating solution, method for producing copper sulfate, method for producing semiconductor circuit board, and method for producing electronic apparatus

Assignee: JX NIPPON MINING & METALS CORPPriority: Apr 28, 2017Filed: Nov 27, 2019Published: Mar 26, 2020
Est. expiryApr 28, 2037(~10.7 yrs left)· nominal 20-yr term from priority
C25D 3/38C01P 2006/80C01G 3/10C25D 5/18H10P 14/47H10W 20/057H10W 20/023H10W 70/05H01L 21/4846H01L 21/76879C25D 7/12H01L 21/2885C25D 7/123H05K 3/181
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Claims

Abstract

Copper sulfate which includes a Fe with a concentration of 0.08 ppm by mass or less.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A plating solution comprising a Fe with a concentration of 0.018 ppm by mass or less. 
     
     
         2 . The plating solution according to  claim 1 , wherein the plating solution further comprises any one, any two, any three, any four, or five of the following items (8-1) to (8-5):
 (8-1) an In with a concentration of 0.2 ppm by mass or less,   (8-2) a Tl with a concentration of 0.01 ppm by mass or less,   (8-3) a Sn with a concentration of 0.3 ppm by mass or less,   (8-4) an Ag with a concentration of 0.4 ppm by mass or less, and   (8-5) an Al with concentration of 0.04 ppm by mass or less.   
     
     
         3 . The plating solution according to  claim 1 , wherein the plating solution further comprises any one, any two, any three, any four, or five of the following items (10-1) to (10-5):
 (10-1) an In with a concentration of 0.08 ppm by mass or less,   (10-2) a Tl with a concentration of 0.01 ppm by mass or less,   (10-3) a Sn with a concentration of 0.1 ppm by mass or less,   (10-4) an Ag with a concentration of 0.2 ppm by mass or less, and   (10-5) an Al with a concentration of 0.013 ppm by mass or less.   
     
     
         4 . The plating solution according to  claim 1 , wherein the plating solution has a copper concentration of from 50 to 100 g/L. 
     
     
         5 . The plating solution according to  claim 1 , wherein the plating solution has a copper concentration of from 50 to 90 g/L. 
     
     
         6 . A method for producing a semiconductor circuit board comprising performing copper plating by using the plating solution according to  claim 1 . 
     
     
         7 . A method for producing an electronic apparatus comprising producing an electronic apparatus by using a semiconductor circuit board produced by the method for producing a semiconductor circuit board according to  claim 6 .

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