Semiconductor device

Abstract

Among multiple drain regions, a contact surface area between second contacts and a drain region most proximal to a central portion of an element region in a second direction is less than a contact surface area between second contacts and a drain region disposed on an outermost side of the element region in the second direction. The multiple drain regions are arranged in the second direction.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor layer of a first conductivity type;   a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;   a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;   a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;   a gate electrode extending in the first direction and being provided on the gate insulating film;   first contacts connected to the band-shaped regions; and   second contacts connected to the drain regions,   each of the band-shaped regions including
 a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and 
 a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer, 
   each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,   among the plurality of drain regions, a contact surface area between the second contacts and the drain region most proximal to a central portion of the element region in the second direction being less than a contact surface area between the second contacts and the drain region disposed on an outermost side of the element region in the second direction.   
     
     
         2 . The device according to  claim 1 , wherein the contact surface area between the drain region and the second contacts is smaller for the drain regions more proximal to the central portion. 
     
     
         3 . The device according to  claim 1 , wherein a number of the second contacts connected to the drain region most proximal to the central portion is less than a number of the second contacts connected to the drain region disposed on the outermost side. 
     
     
         4 . The device according to  claim 3 , wherein the number of the second contacts connected to the drain region is fewer for the drain regions more proximal to the second-direction central portion. 
     
     
         5 . The device according to  claim 1 , wherein among the plurality of band-shaped regions, a contact surface area between the first contacts and the band-shaped region most proximal to the central portion is less than a contact surface area between the first contacts and the band-shaped region disposed on an outermost side of the element region in the second direction. 
     
     
         6 . The device according to  claim 5 , wherein the contact surface area between the band-shaped region and the first contacts is smaller for the band-shaped regions more proximal to the central portion. 
     
     
         7 . The device according to  claim 1 , wherein the back gate region and the source region are arranged alternately along the first direction in the band-shaped region. 
     
     
         8 . A semiconductor device, comprising:
 a semiconductor layer of a first conductivity type;   a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;   a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;   a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;   a gate electrode extending in the first direction and being provided on the gate insulating film;   first contacts connected to the band-shaped regions; and   second contacts connected to the drain regions,   each of the band-shaped regions including
 a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and 
 a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer, 
   each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,   among the plurality of band-shaped regions, a contact surface area between the first contacts and the band-shaped region most proximal to a central portion of the element region in a second direction being less than a contact surface area between the first contacts and the band-shaped region disposed on an outermost side of the element region in the second direction.   
     
     
         9 . The device according to  claim 8 , wherein the contact surface area between the band-shaped region and the first contacts is smaller for the band-shaped regions more proximal to the central portion. 
     
     
         10 . The device according to  claim 8 , wherein a number of the first contacts connected to the band-shaped region most proximal to the central portion is less than the number of the first contacts connected to the band-shaped region disposed on the outermost side. 
     
     
         11 . The device according to  claim 10 , wherein the number of the first contacts connected to the band-shaped region is fewer for the band-shaped regions more proximal to the central portion. 
     
     
         12 . The device according to  claim 8 , wherein
 a contact surface area between a second region and the second contacts is less than a contact surface area between a first region and the second contacts and a contact surface area between a third region and the second contacts when at least one of the drain regions is subdivided into the first region, the second region, and the third region, when the second region is disposed between the first region and the third region in the first direction, and when a length of the first region, a length of the second region, and a length of the third region in the first direction are set to be equal to each other.   
     
     
         13 . The device according to  claim 8 , wherein the back gate region and the source region are arranged alternately along the first direction in the band-shaped region. 
     
     
         14 . A semiconductor device, comprising:
 a semiconductor layer of a first conductivity type;   a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;   a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;   a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;   a gate electrode extending in the first direction and being provided on the gate insulating film;   first contacts connected to the band-shaped regions; and   second contacts connected to the drain regions,   each of the band-shaped regions including
 a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and 
 a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer, 
   each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,   a contact surface area between a second region and the second contacts being less than a contact surface area between a first region and the second contacts and a contact surface area between a third region and the second contacts when at least one of the drain regions is subdivided into the first region, the second region, and the third region, when the second region is disposed between the first region and the third region in the first direction, and when a length of the first region, a length of the second region, and a length of the third region in the first direction are set to be equal to each other.   
     
     
         15 . The device according to  claim 14 , wherein
 a contact surface area between a fifth region and the first contacts is less than a contact surface area between a fourth region and the first contacts and a contact surface area between a sixth region and the first contacts when at least one of the band-shaped regions is subdivided into the fourth region, the fifth region, and the sixth region, when the fifth region is disposed between the fourth region and the sixth region in the first direction, and when a length of the fourth region, a length of the fifth region, and a length of the sixth region in the first direction are set to be equal to each other.   
     
     
         16 . The device according to  claim 14 , wherein the back gate region and the source region are arranged alternately along the first direction in the band-shaped region. 
     
     
         17 . A semiconductor device, comprising:
 a semiconductor layer of a first conductivity type;   a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;   a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;   a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;   a gate electrode extending in the first direction and being provided on the gate insulating film;   first contacts connected to the band-shaped regions; and   second contacts connected to the drain regions,   each of the band-shaped regions including
 a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and 
 a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer, 
   each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,   a contact surface area between a second region and the first contacts being less than a contact surface area between a first region and the first contacts and a contact surface area between a third region and the first contacts when at least one of the band-shaped regions is subdivided into the first region, the second region, and the third region, when the second region is disposed between the first region and the third region in the first direction, and when a length of the first region, a length of the second region, and a length of the third region in the first direction are set to be equal to each other.   
     
     
         18 . The device according to  claim 17 , wherein the back gate region and the source region are arranged alternately along the first direction in the band-shaped region. 
     
     
         19 . The device according to  claim 17 , further comprising:
 an element-separating insulating film provided between the drain region and the source region, the element-separating insulating film contacting the drain region but not contacting the source region; and   a drift region provided in a region directly under the element-separating insulating film, the drift region being connected to the drain region and being of the second conductivity type, an impurity concentration of the drift region being lower than an impurity concentration of the drain region.   
     
     
         20 . A semiconductor device, comprising:
 a semiconductor layer of a first conductivity type;   a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;   a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;   a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;   a gate electrode extending in the first direction and being provided on the gate insulating film;   first contacts connected to the band-shaped regions; and   second contacts connected to the drain regions,   each of the band-shaped regions including
 a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and 
 a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer, 
   each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,   in the at least one of the first direction and the second direction, a contact surface area between the drain region disposed at a central portion of the element region and the second contacts being less than a contact surface area between the drain region other than the drain region disposed at a central portion of the element region and the second contacts, or, a contact surface area between the band-shaped region disposed at a central portion of the element region and the first contacts being less than a contact surface area between the band-shaped region other than the band-shaped region disposed at a central portion of the element region and the first contacts.