Positive photoresist composition and method of forming patterned polyimide layer

Abstract

The present invention provides a positive photoresist composition comprising a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

What is claimed is: 
     
         1 . A positive photoresist composition comprising: a cresol-type novolac resin, one of a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranging from 40 parts to 60 parts by weight, the content of the free cresol in the cresol-type novolac resin being lower than 2 wt %, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide being lower than 285 Å/s. 
     
     
         2 . The positive photoresist composition as claimed in  claim 1 , wherein the cresol-type novolac resin has a weight average molecular weight of 10,000 to 40,000. 
     
     
         3 . The positive photoresist composition as claimed in  claim 1 , wherein the amount of the diazonaphthoquinone-based sensitizer ranges from 45 parts to 55 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         4 . The positive photoresist composition as claimed in  claim 1 , wherein the positive photoresist composition comprises a fluorosurfactant. 
     
     
         5 . The positive photoresist composition as claimed in  claim 1 , wherein the amount of the organic solvent is 100 parts by weight to 500 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         6 . The positive photoresist composition as claimed in  claim 2 , wherein the amount of the organic solvent is 100 parts by weight to 500 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         7 . The positive photoresist composition as claimed in  claim 3 , wherein the amount of the organic solvent is 100 parts by weight to 500 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         8 . The positive photoresist composition as claimed in  claim 4 , wherein the amount of the organic solvent is 100 parts by weight to 500 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         9 . The positive photoresist composition as claimed in  claim 1 , wherein the organic solvent contains 2-heptanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl ethyl ketone or any combinations thereof. 
     
     
         10 . The positive photoresist composition as claimed in  claim 5 , wherein the organic solvent contains 2-heptanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl ethyl ketone or any combinations thereof. 
     
     
         11 . A method for forming a patterned polyimide layer, comprising the following steps:
 coating the positive photoresist composition as claimed in  claim 1  on a polyimide layer, so as to form a photoresist layer;   exposing and developing the photoresist layer with a developer to obtain a patterned photoresist layer, the patterned photoresist layer covering a portion of the polyimide layer;   stripping another portion of the polyimide layer that is not covered with the patterned photoresist layer by using a polyimide stripper; and   removing the patterned photoresist layer by using a photoresist remover, so as to form a patterned polyimide layer.   
     
     
         12 . The method as claimed in  claim 11 , wherein the developer is an aqueous solution of tetramethylammonium hydroxide with a concentration of 3.5 wt % to 7 wt %. 
     
     
         13 . The method as claimed in  claim 11 , wherein the method includes a step of baking the patterned photoresist layer and the polyimide layer at a temperature ranging from 80° C. to 120° C. between the developing step and the stripping step. 
     
     
         14 . The method as claimed in  claim 11 , wherein the photoresist remover contains acetone, methyl ethyl ketone, 2-pentanone, 3-pentanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate or any combination thereof. 
     
     
         15 . The method as claimed in  claim 11 , wherein the polyimide stripper contains 1 wt % to 20 wt % of an organic amine compound, 5 wt % to 30 wt % of an organic nitrogen-containing compound and 50 wt % to 90 wt % of an aqueous ethylene glycol solution. 
     
     
         16 . The method as claimed in  claim 11 , wherein the cresol-type novolac resin of the positive photoresist composition has a weight average molecular weight of 10,000 to 40,000. 
     
     
         17 . The method as claimed in  claim 11 , wherein the amount of the diazonaphthoquinone-based sensitizer of the positive photoresist composition ranges from 45 parts to 55 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         18 . The method as claimed in  claim 11 , wherein the positive photoresist composition comprises a fluorosurfactant. 
     
     
         19 . The method as claimed in  claim 11 , wherein the amount of the organic solvent of the positive photoresist composition is 100 parts by weight to 500 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight. 
     
     
         20 . The method as claimed in  claim 11 , wherein the organic solvent of the positive photoresist composition contains 2-heptanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, methyl ethyl ketone or any combinations thereof.