Controlling oxygen concentration levels during processing of highly-reflective contacts

Abstract

Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.

1 . (canceled) 
     
     
         2 . An optoelectronic semiconductor device having a contact prepared by the method comprising:
 depositing a metallic stack on a semiconductor surface of said optoelectronic semiconductor device; and   wherein said metallic stack comprises at least layers of silver and platinum, wherein, in said metallic stack, a silver layer does not contact a platinum layer.   
     
     
         3 . The optoelectronic semiconductor device of  claim 2 , wherein said metallic stack also comprises one or more layers of at least one of Al, Au, Pd, Ni, Ge, Ti or Ru 
     
     
         4 . The optoelectronic semiconductor device of  claim 3 , wherein said metallic stack comprises a metal scheme of Ti—Pt—Au—Pt. 
     
     
         5 . The optoelectronic semiconductor device of  claim 2 , wherein an interface is defined between said stack and said semiconductor surface and wherein said method further comprises,
 introducing a dose of oxygen into said metallic stack; and   diffusing a portion of said oxygen though said metallic stack to said interface.   
     
     
         6 . The optoelectronic semiconductor device of  claim 5 , wherein said metallic stack comprises a silver layer in contact with said semiconductor surface. 
     
     
         7 . The optoelectronic semiconductor device of  claim 6 , wherein said metallic stack comprises an oxygen-gettering metal. 
     
     
         8 . The optoelectronic semiconductor device of  claim 7 , wherein diffusing comprises annealing the optoelectronic semiconductor device to diffuse an oxygen-gettering metal to said interface. 
     
     
         9 . The optoelectronic semiconductor device of  claim 7 , wherein said oxygen-gettering metal comprises at least one of Ni, Al, Ti, Mg, or Sc. 
     
     
         10 . The optoelectronic semiconductor device of  claim 7 , wherein said diffusing comprises diffusing a portion of said oxygen-gettering metal to said interface, and diffusing a portion of said oxygen to said interface.