US2020083207A1PendingUtilityA1
Method of Manufacturing a Multi-Chip Semiconductor Power Device
Assignee: INFINEON TECHNOLOGIES AUSTRIA AGPriority: Mar 20, 2013Filed: Nov 14, 2019Published: Mar 12, 2020
Est. expiryMar 20, 2033(~6.6 yrs left)· nominal 20-yr term from priority
H10W 90/766H10W 90/763H10W 90/756H10W 90/753H10W 90/752H10W 90/736H10W 74/00H10W 72/07653H10W 72/07637H10W 72/07636H10W 72/07354H10W 72/07337H10W 72/07336H10W 72/07334H10W 72/07331H10W 72/886H10W 72/884H10W 72/354H10W 72/352H10W 72/347H10W 72/076H10W 72/073H10W 90/811H10W 74/111H10W 72/50H10W 70/481H10W 70/417H10W 72/60H10W 72/324H10W 90/00H01L 2924/07802H01L 2224/32245H01L 2224/291H01L 2224/92246H01L 2224/83815H01L 2224/8321H01L 24/48H01L 2224/8385H01L 24/73H01L 24/92H01L 2224/48145H01L 2224/48137H01L 2224/33181H01L 2224/40247H01L 24/32H01L 2924/00014H01L 24/84H01L 2924/13062H01L 2924/1305H01L 23/3107H01L 24/83H01L 24/49H01L 25/50H01L 2924/13091H01L 2224/40137H01L 2224/73265H01L 2924/13055H01L 2224/2919H01L 23/49562H01L 2924/1306H01L 24/29H01L 24/40H01L 23/49513H01L 2224/8384H01L 2224/48247H01L 2224/48091H01L 2924/181H01L 2224/40095H01L 25/18H01L 2224/83801H01L 2224/8485H01L 23/49575H01L 2224/73263H01L 2924/014H01L 2224/84801H01L 2924/1431
58
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A method of manufacturing a semiconductor device includes mounting a first semiconductor power chip on a first carrier, mounting a second semiconductor power chip on a second carrier, bonding a contact clip to the first semiconductor power chip and to the second semiconductor power chip, and mounting a third semiconductor chip over the contact clip.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of manufacturing a semiconductor device, the method comprising:
mounting a first semiconductor power chip on a first carrier; mounting a second semiconductor power chip on a second carrier; bonding a contact clip to the first semiconductor power chip and to the second semiconductor power chip; mounting a third semiconductor chip over the contact clip; depositing a first bonding substance onto the first carrier; placing the first semiconductor power chip on the first bonding substance; depositing a second bonding substance onto the second carrier; placing the second semiconductor power chip on second bonding substance; depositing a third bonding substance onto the contact clip; placing the third semiconductor chip on third bonding substance; and wherein the mounting of the first, second and third chips comprises performing a single step of applying energy to the arrangement comprising the first, second and third semiconductor chip to reflow or cure each one of the first, second, and third bonding substances.
2 . The method of claim 1 , wherein the first bonding substance, the second bonding substance and the third bonding substance each comprise a solder material.
3 . The method of claim 1 , further comprising:
applying a bond wire configured to electrically connect the third semiconductor chip to the first semiconductor power chip or to the second semiconductor power chip.
4 . The method of claim 1 , further comprising:
electrically connecting a chip load electrode of the first semiconductor power chip to a third carrier, wherein the third carrier is arranged next to the first carrier.
5 . The method of claim 4 , wherein the third carrier is coplanar with the first carrier and the second carrier.
6 . The method of claim 1 , wherein the third semiconductor chip is mounted over the contact clip in a face-up orientation in which electrodes of the third semiconductor chip are disposed on a surface of the third semiconductor chip opposite a surface of the third semiconductor chip which is mounted to the contact clip.
7 . The method of claim 1 , wherein the contact clip has an extension in at least one lateral direction protruding beyond a laterally outer outline of the first semiconductor power chip, the method further comprising:
electrically connecting the extension of the contact clip to a fourth carrier.
8 . The method of claim 1 , further comprising:
mounting a fourth semiconductor chip over the contact clip.
9 . The method of claim 1 , further comprising:
mounting a fourth semiconductor chip over the contact clip, wherein applying energy for mounting the first semiconductor power chip, the second semiconductor power chip and the third semiconductor chip also serves for mounting the fourth semiconductor chip.
10 . The method of claim 1 , wherein the first carrier and the second carrier are electrically disconnected from each other.
11 . The method of claim 1 , wherein the third semiconductor chip is a logic chip.
12 . The method of claim 1 , further comprising:
covering the first semiconductor power chip, the second semiconductor power chip, the contact clip and the third semiconductor chip at least partially with an encapsulation material.
13 . The method of claim 12 , wherein a surface of the first carrier opposite the mounting surface of the first carrier or a surface of the second carrier opposite the mounting surface of the second carrier are exposed by the encapsulation material so as to form a leadless package external contact area.Join the waitlist — get patent alerts
Track US2020083207A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.