Double-sided integrated circuit module having an exposed semiconductor die

Abstract

The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

1 . A radio frequency (RF) module, comprising:
 a module substrate defining a top side and a bottom side;   a plurality of electronic components coupled to the top side;   a semiconductor die coupled to the bottom side; and   a first mold compound coupled to the semiconductor die and exposing a surface of the semiconductor die.   
     
     
         2 . The RF module of  claim 1 , wherein the surface of the semiconductor die is a bottom surface of the semiconductor die facing opposite the module substrate. 
     
     
         3 . The RF module of  claim 1 , wherein the semiconductor die is coupled to the module substrate via a plurality of conductive elements. 
     
     
         4 . The RF module of  claim 3 , wherein the first mold compound surrounds each of the plurality of conductive elements. 
     
     
         5 . The RF module of  claim 1 , wherein the first mold compound and the surface of the semiconductor die define a common plane. 
     
     
         6 . The RF module of  claim 5 , further comprising a plurality of module contacts extending below the common plane, wherein at least one of the plurality of module contacts is configured to provide an electrical connection between the module substrate and a secondary substrate. 
     
     
         7 . The RF module of  claim 5 , wherein a distance between the common plane and the bottom side of the module substrate is between 80 μm and 200 μm. 
     
     
         8 . The RF module of  claim 1 , further comprising a second mold compound coupled to the top side and encapsulating the plurality of electronic components. 
     
     
         9 . The RF module of  claim 8 , further comprising a shield layer at least partially surrounding the second mold compound. 
     
     
         10 . The RF module of  claim 1 , further comprising a heat exchanger coupled to the surface of the semiconductor die and configured to exchange heat with the semiconductor die. 
     
     
         11 . A method for assembling a radio frequency (RF) module, comprising:
 coupling an electronic component to a top side of a module substrate;   coupling a semiconductor die to a bottom side of the module substrate;   encapsulating the semiconductor die in a mold compound such that the mold compound at least partially surrounds the semiconductor die; and   removing a portion of the mold compound to expose a surface of the semiconductor die.   
     
     
         12 . The method of  claim 11 , wherein removing the portion of the mold compound exposes a bottom surface of the semiconductor die facing opposite the module substrate. 
     
     
         13 . The method of  claim 11 , wherein coupling the semiconductor die to the bottom side of the module substrate further comprises coupling a plurality of conductive elements between the semiconductor die and the bottom side of the module substrate. 
     
     
         14 . The method of  claim 13 , wherein encapsulating the semiconductor die in the mold compound comprises at least partially surrounding each of the plurality of conductive elements. 
     
     
         15 . The method of  claim 11 , wherein removing the portion of the mold compound forms a planar bottom module surface defined by the mold compound and the surface of the semiconductor die. 
     
     
         16 . The method of  claim 15 , wherein:
 removing the portion of the mold compound further exposes a plurality of module contacts extending below the planar bottom module surface; and   the method further comprises coupling the plurality of module contacts to a secondary substrate.   
     
     
         17 . The method of  claim 15 , further comprising coupling a heat exchanger to the planar bottom module surface such that the heat exchanger is configured to exchange heat with the semiconductor die. 
     
     
         18 . An electronic device, comprising:
 a circuit board on which a plurality of electronic components is mounted; and   an integrated circuit (IC) module coupled to the circuit board, comprising:
 a module substrate having a top side and a bottom side adjacent the circuit board; 
 a first electronic component coupled to the top side; 
 a second electronic component coupled to the bottom side; and 
 a mold compound at least partially surrounding the second electronic component and exposing a surface of the second electronic component. 
   
     
     
         19 . The electronic device of  claim 18 , wherein:
 the mold compound and the surface of the second electronic component define a common plane facing the circuit board;   the electronic device further comprises a plurality of module contacts extending below the common plane and coupled to the circuit board; and   at least one of the plurality of module contacts provides an electrical connection between the module substrate and an electronic component of the plurality of electronic components.   
     
     
         20 . The electronic device of  claim 19 , wherein a distance between the common plane and the bottom side of the module substrate is between 80 μm and 200 μm.