Organic thin film transistors and the use thereof in sensing applications

Abstract

The present invention relates to organic thin film transistors and the preparation and use thereof in sensing applications, and in particular in glucose sensing applications.

The claims defining the invention are as follows: 
     
         1 . An organic thin film transistor based sensor device, the device including:
 (i) a gate electrode;   (ii) a dielectric layer;   (iii) a semiconducting layer including at least one organic compound;   (iv) a source electrode;   (v) a drain electrode;   (vi) a substrate; and   (vii) an enzyme located in, or forming part of any one of (i)-(vi),   wherein the device has top gate bottom contact configuration such that the gate electrode is disposed above the dielectric layer, and the dielectric layer is disposed above the semiconducting layer.   
     
     
         2 . The device of  claim 1 , wherein the semiconducting layer is disposed above and in between the source electrode and the drain electrode. 
     
     
         3 . The device of  claim 1 , wherein the source electrode and the drain electrode are disposed above the substrate. 
     
     
         4 . The device of  claim 1 , wherein the gate electrode comprises a porous matrix. 
     
     
         5 . The device of  claim 4 , wherein the porous matrix is a sulfonated tetrafluoroethylene-based fluoropolymer-copolymer. 
     
     
         6 . The device of  claim 5 , wherein the sulfonated tetrafluoroethylene-based fluoropolymer-copolymer is a copolymer comprising a tetrafluoroethylene backbone and perfluoroalkyl ether groups terminated with sulfonate groups. 
     
     
         7 . The device of  claim 6 , wherein the sulfonated tetrafluoroethylene-based fluoropolymer-copolymer is ethanesulfonic acid, 2-[1-[difluoro[(1,2,2-trifluoroethenyl)oxy]methyl]-1,2,2,2-tetrafluoroethoxy]-1,1,2,2-tetrafluoro-, polymer with 1,1,2,2-tetrafluoroethene. 
     
     
         8 . The device of  claim 1 , wherein the dielectric layer comprises poly(4-vinylphenol) or lithium perchlorate-doped poly(4-vinylpyridine). 
     
     
         9 . The device of  claim 1 , wherein the enzyme is located in, or forms part of, the gate electrode. 
     
     
         10 . The device of  claim 1 , wherein the enzyme is located in, or forms part of, the dielectric layer. 
     
     
         11 . The device of  claim 1 , wherein the at least one organic compound is poly(3-hexyl-thiophene). 
     
     
         12 . The device of  claim 1 , wherein the semiconducting layer has a thickness between about 5 nm and about 500 nm. 
     
     
         13 . The device of  claim 1 , wherein the dielectric layer has a thickness between about 50 nm and 750 nm. 
     
     
         14 . The device according to  claim 1 , wherein the enzyme is glucose oxidase. 
     
     
         15 . A transistor device according to  claim 1  comprising: a gate electrode comprising a sulfonated tetrafluoroethylene-based fluoropolymer-copolymer and glucose oxidase, the gate electrode being disposed above, and in direct contact with, a dielectric layer, the dielectric layer being disposed above, and in direct contact with, a semiconducting layer, the semiconducting layer being disposed above and in between a source electrode and a drain electrode, and in direct contact with, the source electrode and the drain electrode, the source electrode and the drain electrode being disposed above, and in direct contact with, a substrate. 
     
     
         16 . A method for preparing a transistor device as defined in  claim 1  comprising:
 (a) depositing the source electrode and the drain electrode over the substrate; 
 (b) depositing the semiconducting layer comprising at least one organic compound over the source electrode and the drain electrode; 
 (c) depositing the dielectric layer over the semiconducting layer; 
 (d) depositing the gate electrode over the dielectric layer, 
 wherein the enzyme is introduced into the device as part of any one or more of steps a) to d). 
 
     
     
         17 . The method of  claim 16 , wherein step c) comprises forming a mixture of a dielectric material and the enzyme and depositing the mixture over the semiconducting layer to form the dielectric layer. 
     
     
         18 . The method of  claim 16 , wherein step d) comprises forming a mixture of a porous matrix and the enzyme and depositing the mixture over the dielectric layer to form the gate electrode. 
     
     
         19 . Use of the device of  claim 1 , for sensing a compound in a sample/analyte. 
     
     
         20 . A method for determining a concentration or an amount of a compound in a sample/analyte comprising the compound, the method comprising the following steps:
 a) providing a device as claimed in  claim 1 ;   b) applying a gate voltage and a drain voltage to the device;   c) contacting the sample/analyte with the device;   d) detecting drain current; and   e) determining the concentration or the amount of the compound based on the magnitude of the drain current.