Gate Contact Structure for a Semiconductor Device

Abstract

A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor body having a first surface and a second surface opposite to the first surface;   a transistor cell structure in the semiconductor body;   a gate contact structure comprising a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line; and   a gate resistor structure electrically coupled between the gate pad and the gate electrode layer,   wherein an electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising a source contact structure overlapping the transistor cell structure, the source contact structure being electrically connected to source regions of the transistor cell structure. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the gate line at least partly surrounds the source contact structure. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the gate resistor structure is electrically coupled between the gate pad and the gate line. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the gate resistor structure is electrically coupled between the gate line and the gate electrode layer. 
     
     
         6 . The semiconductor device of  claim 1 , wherein an edge portion of the gate resistor structure and an edge portion of the gate electrode layer are arranged along a same line parallel to the gate line. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the gate resistor structure comprises a polycrystalline silicon layer having a sheet resistance higher than 10 Ohm/square. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the source contact structure and the gate contact structure are patterned parts of a same metal wiring layer. 
     
     
         9 . The semiconductor device of  claim 1 , further comprising an isolation layer on the first surface of the semiconductor body, the gate resistor structure and the gate electrode layer abutting the isolation layer. 
     
     
         10 . The semiconductor device of  claim 1 , further comprising an isolation layer on the gate resistor structure and the gate electrode layer, wherein the gate contact structure is formed on the isolation layer. 
     
     
         11 . The semiconductor device of  claim 1 , wherein the gate resistor structure comprises gate resistor elements electrically coupled in parallel between the gate line and the gate electrode layer of the transistor cell structure. 
     
     
         12 . The semiconductor device of  claim 11 , wherein an electrical resistance of the gate resistor elements decreases with an increasing electrical resistance of the gate line from the gate pad to the gate resistor elements, respectively. 
     
     
         13 . The semiconductor device of  claim 11 , wherein a first terminal of the gate resistor structure is electrically connected with the gate line by a first electric contact structure and a second terminal of the gate resistor structure is electrically connected with the gate electrode layer by a second electric contact structure. 
     
     
         14 . The semiconductor device of  claim 13 , wherein the second electric contact structure comprises two electric contact elements, which are electrically shunted by a bridging element. 
     
     
         15 . The semiconductor device of  claim 13 , wherein at least a part of the second electric contact structure is located within a lateral recess of the gate line. 
     
     
         16 . A semiconductor device, comprising:
 a semiconductor body having a first surface and a second surface opposite to the first surface;   a transistor cell structure in the semiconductor body;   a gate contact structure comprising a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line; and   a gate interconnecting structure comprising gate interconnecting elements protruding from the gate electrode layer and being electrically coupled in parallel to the gate line,   wherein a minimum resistance of the gate interconnecting elements is greater than 40 Ohm.   
     
     
         17 . The semiconductor device of  claim 16 , wherein the gate interconnecting elements are formed as comb segments protruding from the gate electrode layer in a lateral plane. 
     
     
         18 . The semiconductor device of  claim 16 , wherein an electrical resistance of the gate interconnecting elements decreases with an increasing electrical resistance of the gate line from the gate pad to the gate interconnecting elements, respectively. 
     
     
         19 . A method for manufacturing a semiconductor device, the method comprising:
 forming a transistor cell structure in a semiconductor body having a first surface and a second surface opposite to the first surface;   forming a gate contact structure comprising a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line; and   forming a gate resistor structure electrically coupled between the gate pad and the gate electrode layer,   wherein an electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.   
     
     
         20 . A method for manufacturing a semiconductor device, the method comprising:
 forming a transistor cell structure in a semiconductor body having a first surface and a second surface opposite to the first surface;   forming a gate contact structure comprising a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line; and   forming a gate interconnecting structure comprising gate interconnecting elements protruding from the gate electrode layer and electrically coupled in parallel to the gate line,   wherein a minimum resistance of the gate interconnecting elements is greater than 40 Ohm.