METHOD AND/OR SYSTEM FOR SYNTHESIS OF ZINC OXIDE (ZnO)

Abstract

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.

1 - 11 . (canceled) 
     
     
         12 . An article comprising: a non-transitory storage medium having stored thereon instructions capable of being executed by at least one computing device, the at least one computing device including at least one processor and at least one memory; the at least one computing device to execute instructions on the at least one processor; the instructions to be executed having been fetched from the at least one memory for execution on the at least one processor, and the at least one computing device to store in the at least one memory of the at least one computing device any results to be generated from the execution on the at least one processor of the to be executed instructions;
 the instructions to be executed comprise instructions for execution of one or more sequences of operations in a fluid handling system (FHS) for a relatively low temperature aqueous solution zinc oxide growth system (ZGS) to perform pre-growth operations to prepare a ZGS at least for execution of a particular zinc oxide growth process formulation, the FHS a closed interconnected network and a control system to drive components of the interconnected network, the control system comprising the at least one computing device including at least one processor and at least one memory, wherein the at least one memory includes the non-transitory storage medium having the pre-growth instructions stored thereon;   wherein the pre-growth operation instructions to be executed, as a result of execution, to:   verify adequate fluid sealing of a fluid sealable chamber enclosure;   fill an unpressured, empty vessel with zinc oxide growth solution to a fill level and pressurize the vessel after containing the zinc oxide growth solution; and/or   transfer the zinc oxide growth solution from the vessel to the chamber enclosure for zinc oxide growth/synthesis.   
     
     
         13 . The article of  claim 12 , wherein the pre-growth operations instructions to be executed, as a result of execution, further to: pressurize the chamber enclosure and to confirm that the pressure within the chamber enclosure remains stable to verify adequate fluid sealing of the fluid sealable chamber enclosure. 
     
     
         14 . The article of  claim 12 , wherein the pre-growth operation instructions to be executed, as a result of execution, further to: fill an unpressured, empty vessel with zinc oxide growth solution to a fill level to be measured by optical sensors. 
     
     
         15 . The article of  claim 12 , wherein the pre-growth operation instructions to be executed, as a result of execution, further to: utilize a pressure differential between the chamber enclosure and the vessel containing zinc oxide growth solution to drive growth solution to flow from the pressure vessel to the chamber enclosure for zinc oxide growth/synthesis. 
     
     
         16 . The article of  claim 14 , wherein the pre-growth operation instructions to be executed, as a result of execution, further to: direct fluid flow along a path to the chamber enclosure to bypass portions of the FHS that have more limited fluid flow due at least in part to an integrated flow controller within those portions, in order to transfer the zinc oxide growth solution from the vessel to the chamber enclosure for zinc oxide growth/synthesis. 
     
     
         17 . An article comprising: a non-transitory storage medium having stored thereon instructions capable of being executed by at least one computing device, the at least one computing device including at least one processor and at least one memory; the at least one computing device to execute instructions on the at least one processor; the instructions to be executed having been fetched from the at least one memory for execution on the at least one processor, and the at least one computing device to store in the at least one memory of the at least one computing device any results to be generated from the execution on the at least one processor of the to be executed instructions;
 the instructions to be executed comprise instructions for execution of one or more sequences of operations in a fluid handling system (FHS) for a relatively low temperature aqueous solution zinc oxide growth system (ZGS) at least to execute a zinc oxide growth process formulation and perform post-growth operations so that the FHS is placed in a state to begin pre-growth operations for another zinc oxide growth cycle using the FHS, the fluid handling system comprising a closed interconnected network and a control system to drive components of the interconnected network, the control system comprising the at least one computing device including at least one processor and at least one memory, wherein the at least one memory includes the non-transitory storage medium having the instructions stored thereon;   wherein the growth process formulation and post-growth operation instructions to be executed, as a result of execution, to:   implement a particular zinc oxide growth process formulation for a fluid sealed chamber enclosure containing zinc oxide growth solution;   drain the chamber enclosure of zinc oxide growth solution after completing the chamber enclosure operations for the particular zinc oxide growth process formulation; and/or   place the FHS in a state to begin pre-growth operations for another zinc oxide growth cycle using the FHS, wherein post-growth operation instructions to be executed, as a result of execution, to:   gas purge portions of the FHS;   rinse portions of the FHS, including the chamber enclosure; and/or   clean the chamber enclosure.   
     
     
         18 . The article of  claim 17 , wherein growth process formulation operation instructions to be executed, as a result of execution, to: lock access to the chamber enclosure via a control system at least during implementation of the particular zinc oxide growth process formulation in order to implement the particular zinc oxide growth process formulation. 
     
     
         19 . The article of  claim 17 , wherein growth process formulation operation instructions to be executed, as a result of execution, to: heat the growth solution using a particular temperature signature via a control system during implementation of the particular zinc oxide growth process formulation in order to implement the particular zinc oxide growth process formulation. 
     
     
         20 . The article of  claim 17 , wherein growth process formulation operation instructions to be executed, as a result of execution, to: adjust pressure within the chamber enclosure using a particular pressure signature via a control system during implementation of the particular zinc oxide growth process formulation in order to implement the particular zinc oxide growth process formulation. 
     
     
         21 . The article of  claim 17 , wherein growth process formulation operation instructions to be executed, as a result of execution, to: adjust flow rate of growth solution to the chamber enclosure using a particular flow rate signature via a control system during implementation of the particular zinc oxide growth process formulation in order to implement the particular zinc oxide growth process formulation 
     
     
         22 . The article of  17 , wherein the fluid handling system includes a wafer substrate holder and/or a chamber enclosure to engage with a drive mechanism to rotate one relative to the other; and wherein growth process formulation operation instructions to be executed, as a result of execution, to: use a particular speed of relative rotation via a control system during implementation of the particular zinc oxide growth process formulation in order to implement the particular zinc oxide growth process formulation.