Artificially engineered iii-nitride digital alloy

Abstract

A material structure and system for generating a III-Nitride digital alloy.

1 - 20 . (canceled) 
     
     
         21 . A method for forming a III-Nitride optoelectronic device, the method comprising:
 establishing a wavelength for the optoelectronic device;   providing first and second III-Nitride binary alloy materials; and   epitaxially layering the first and second III-Nitride binary alloy materials proximate to each other with thicknesses based on the established wavelength, wherein the first and second III-Nitride binary alloy materials are different.   
     
     
         22 . The method of  claim 21 , further comprising:
 epitaxially layering, proximate to at least one of the first or the second III-Nitride binary alloy materials, a third III-Nitride binary alloy material that differs from the first and second III-Nitride binary alloy materials to form a quaternary optoelectronic device, wherein a thickness of the third III-Nitride binary alloy material is based on the established wavelength.   
     
     
         23 . The method of  claim 21 , wherein:
 the established wavelength is selectable within a range of about 510 nanometers to about 1900 nanometers.   
     
     
         24 . The method of  claim 21 , wherein:
 the established wavelength is selectable within a range of about 240 nanometers to about 310 nanometers.