Manufacturing method of semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device, comprising the steps of:
 forming an oxide semiconductor film over a first insulating film; and   performing a heat treatment in a hydrogen-containing atmosphere after the forming,   wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20  atoms/cm 3 .   
     
     
         2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein a resistivity of the oxide semiconductor film is greater than or equal to 1×10 −3  Ωcm and less than 1×10 4  Ωcm. 
     
     
         3 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the oxide semiconductor film includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30 0 . 
     
     
         4 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the oxide semiconductor film includes at least one of an In—Ga oxide, an In—Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd). 
     
     
         5 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the semiconductor device comprises a resistor comprising the oxide semiconductor film. 
     
     
         6 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the semiconductor device comprises a capacitor comprising the oxide semiconductor film. 
     
     
         7 . A method for manufacturing a semiconductor device, comprising the steps of:
 forming an oxide semiconductor film over a first insulating film; and   forming a second insulating film including hydrogen over and in contact with the oxide semiconductor film,   wherein the oxide semiconductor film serves as one of an electrode and a wiring.   
     
     
         8 . The method for manufacturing a semiconductor device according to  claim 7 , wherein a resistivity of the oxide semiconductor film is greater than or equal to 1×10 3  Ωcm and less than 1×10 4  Ωcm. 
     
     
         9 . The method for manufacturing a semiconductor device according to  claim 7 , wherein the oxide semiconductor film includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°. 
     
     
         10 . The method for manufacturing a semiconductor device according to  claim 7 , wherein the oxide semiconductor film includes at least one of an In—Ga oxide, an In—Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).