US2020035497A1PendingUtilityA1

Processing apparatus

63
Assignee: TOKYO ELECTRON LTDPriority: Jun 16, 2014Filed: Oct 8, 2019Published: Jan 30, 2020
Est. expiryJun 16, 2034(~7.9 yrs left)· nominal 20-yr term from priority
Inventors:Akinobu KakimotoYoshinobu HayakawaSatoshi MizunagaYasuhiro HamadaMitsuhiro Okada
H10P 50/693H10P 50/692H10P 72/0612H10P 50/691H10P 50/283H10P 50/73H10P 50/242H01J 2237/334H01J 37/32082H01L 21/31116H01L 21/308H01L 21/3083H01L 21/31144H01L 21/3065H01L 21/3081C23C 16/52C23C 16/54H01J 37/32899H01J 37/32009H10P 50/267H10P 14/6336H10P 14/6902H10P 14/6514H10D 64/011H05H 1/46
63
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Claims

Abstract

A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A processing apparatus, comprising:
 a chamber having a gas inlet and a gas outlet;   a plasma generator; and   a controller configured to cause:   (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film;   (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and   (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.   
     
     
         2 . The processing apparatus according to  claim 1 , wherein the silicon-containing film is formed of a silicon-containing oxide film, a silicon nitride film, or a stacked film of the silicon-containing oxide film and the silicon nitride film. 
     
     
         3 . The processing apparatus according to  claim 1 , wherein the protection film contains silicon or carbon. 
     
     
         4 . The processing apparatus according to  claim 1 , wherein the protection film includes at least two stacked films of a carbon film and a silicon film. 
     
     
         5 . The processing apparatus according to  claim 1 , wherein the step (b) initially forms a carbon-containing film and subsequently forms a silicon-containing film. 
     
     
         6 . The processing apparatus according to  claim 1 , wherein the step (a) continues before the recess has a bowing shape. 
     
     
         7 . The processing apparatus according to  claim 1 , wherein a cycle of the steps (b) and (c) is repeated multiple times. 
     
     
         8 . The processing apparatus according to  claim 1 , further comprising: a gas supplying part configured to supply a etching gas and a film forming gas into the chamber. 
     
     
         9 . The processing apparatus according to  claim 1 , further comprising: a gas supplying part configured to supply a gas containing fluorocarbon into the chamber. 
     
     
         10 . The processing apparatus according to  claim 1 , further comprising: a gas supplying part configured to supply a gas containing carbon into the chamber. 
     
     
         11 . The processing apparatus according to  claim 1 , further comprising: a gas supplying part configured to supply a gas containing silicon into the chamber. 
     
     
         12 . The processing apparatus according to  claim 1 , wherein (a), (b) and (c) are performed in-situ. 
     
     
         13 . A processing apparatus, comprising:
 a chamber having a gas inlet and a gas outlet;   a plasma generator; and   a controller configured to cause:   (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film;   (b) forming a protection film on a side wall of the recess in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and   (c) etching the silicon-containing film to a second depth with the second plasma in the chamber, the second depth being greater than the first depth   wherein (a), (b) and (c) is performed in-situ.   
     
     
         14 . The processing apparatus according to  claim 9 , wherein the film is formed of a silicon-containing oxide film, a silicon nitride film, or a stacked film of the silicon-containing oxide film and the silicon nitride film. 
     
     
         15 . The processing apparatus according to  claim 9 , wherein the protection film contains silicon or carbon. 
     
     
         16 . The processing apparatus according to  claim 9 , wherein the protection film includes at least two stacked films of a carbon film and a silicon film. 
     
     
         17 . The processing apparatus according to  claim 9 , wherein the step (b) initially forms a carbon-containing film and subsequently forms a silicon-containing film. 
     
     
         18 . The processing apparatus according to  claim 9 , wherein the step (a) continues before the recess has a bowing shape. 
     
     
         19 . The processing apparatus according to  claim 9 , wherein a cycle of the steps (b) and (c) is repeated multiple times. 
     
     
         20 . The processing apparatus according to  claim 9 , further comprising: a gas supplying part configured to supply a etching gas and a film forming gas into the chamber. 
     
     
         21 . The processing apparatus according to  claim 9 , further comprising: a gas supplying part configured to supply a gas containing fluorocarbon into the chamber. 
     
     
         22 . The processing apparatus according to  claim 9 , further comprising: a gas supplying part configured to supply a gas containing carbon into the chamber. 
     
     
         23 . The processing apparatus according to  claim 9 , further comprising: a gas supplying part configured to supply a gas containing silicon into the chamber. 
     
     
         24 . The processing apparatus according to  claim 9 , wherein (a), (b) and (c) are performed in-situ. 
     
     
         25 . A processing apparatus, comprising:
 a chamber having a gas inlet and a gas outlet;   a plasma generator; and   a controller configured to cause:   (a) etching a film to a first depth with a first plasma, thereby forming a recess in the silicon-containing film;   (b) forming a protection film on a side wall of the recess, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and   (c) etching the film to a second depth with the second plasma, the second depth being greater than the first depth.   
     
     
         26 . The processing apparatus according to  claim 25 , wherein the silicon-containing film is formed of a silicon-containing oxide film, a silicon nitride film, or a stacked film of the silicon-containing oxide film and the silicon nitride film. 
     
     
         27 . The processing apparatus according to  claim 25 , wherein the protection film contains silicon or carbon. 
     
     
         28 . The processing apparatus according to  claim 25 , wherein the protection film includes at least two stacked films of a carbon film and a silicon film. 
     
     
         29 . The processing apparatus according to  claim 25 , wherein the step (b) initially forms a carbon-containing film and subsequently forms a silicon-containing film. 
     
     
         30 . The processing apparatus according to  claim 25 , wherein the step (a) continues before the recess has a bowing shape. 
     
     
         31 . The processing apparatus according to  claim 25 , wherein a cycle of the steps (b) and (c) is repeated multiple times. 
     
     
         32 . The processing apparatus according to  claim 25 , further comprising: a gas supplying part configured to supply a etching gas and a film forming gas into the chamber. 
     
     
         33 . The processing apparatus according to  claim 25 , further comprising: a gas supplying part configured to supply a gas containing fluorocarbon into the chamber. 
     
     
         34 . The processing apparatus according to  claim 25 , further comprising: a gas supplying part configured to supply a gas containing carbon into the chamber. 
     
     
         35 . The processing apparatus according to  claim 25 , further comprising: a gas supplying part configured to supply a gas containing silicon into the chamber.

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