US2020035496A1PendingUtilityA1

Plasma processing apparatus and plasma processing method

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Assignee: TOKYO ELECTRON LTDPriority: Jun 16, 2014Filed: Oct 8, 2019Published: Jan 30, 2020
Est. expiryJun 16, 2034(~7.9 yrs left)· nominal 20-yr term from priority
Inventors:Akinobu KakimotoYoshinobu HayakawaSatoshi MizunagaYasuhiro HamadaMitsuhiro Okada
H10P 50/693H10P 50/692H10P 72/0612H10P 50/691H10P 50/283H10P 50/73H10P 50/242H01J 2237/334H01J 37/32082H01L 21/31144H01L 21/3083H01L 21/308H01L 21/31116H01L 21/3065H01L 21/3081C23C 16/52C23C 16/54H01J 37/32899H01J 37/32009H10P 50/267H10P 14/6336H10P 14/6902H10P 14/6514H10D 64/011H05H 1/46
63
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Claims

Abstract

A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A plasma processing apparatus, comprising:
 a chamber having a gas inlet and a gas outlet;   a plasma generator; and   a controller configured to cause:
 (a) providing a substrate including a silicon-containing film and a mask formed on the film; 
 (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; 
 (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and 
 (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth. 
   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein the silicon-containing film is formed of a silicon-containing oxide film, a silicon nitride film, or a stacked film of the silicon-containing oxide film and the silicon nitride film. 
     
     
         3 . The plasma processing apparatus according to  claim 1 , wherein the steps (c) and (d) are performed in a same chamber. 
     
     
         4 . The plasma processing apparatus according to  claim 1 , wherein the step (c) is performed in non-plasma. 
     
     
         5 . The plasma processing apparatus according to  claim 1 , wherein the steps (c) and (d) are repeated multiple times. 
     
     
         6 . The plasma processing apparatus according to  claim 1 , wherein the method further includes performing a treatment process with any of a single gas of monosilane and a mixed gas containing monosilane after the step (c) and before the step (d). 
     
     
         7 . The plasma processing apparatus according to  claim 1 , wherein the protection film consists of at least two layers. 
     
     
         8 . The plasma processing apparatus according to  claim 1 , wherein the protection film is formed by supplying a film forming gas containing carbon. 
     
     
         9 . The plasma processing apparatus according to  claim 8 , wherein the film forming gas contains hydrocarbon gas. 
     
     
         10 . The plasma processing apparatus according to  claim 8 , wherein the film forming gas contains ethylene gas. 
     
     
         11 . The plasma processing apparatus according to  claim 1 , wherein the plasma etching is performed with plasma generated by a gas containing fluorocarbon. 
     
     
         12 . The plasma processing apparatus according to  claim 1 , wherein the plasma etching is performed with plasma generated by a hexafluoro-1,3-butadiene gas. 
     
     
         13 . The plasma processing apparatus according to  claim 1 , further comprising: a gas supplying unit configured to supply a etching gas and a film forming gas into the chamber. 
     
     
         14 . The plasma processing apparatus according to  claim 1 , further comprising: a gas supplying unit configured to supply a gas containing fluorocarbon into the chamber. 
     
     
         15 . The plasma processing apparatus according to  claim 1 , further comprising: a gas supplying unit configured to supply a gas containing carbon into the chamber. 
     
     
         16 . The plasma processing apparatus according to  claim 1 , further comprising: a gas supplying unit configured to supply a gas containing silicon into the chamber. 
     
     
         17 . A plasma processing method, the method comprising:
 (a) providing a substrate including a silicon-containing film and a mask formed on the film;   (b) etching the film through the mask to the first depth, thereby forming a recess in the film;   (c) forming a protection film at least on the mask and a side wall of the recess formed in the silicon-containing film after (a); and   (d) etching the film through the mask to a second depth, the second depth being greater than the first depth.   
     
     
         18 . The plasma processing method according to  claim 17 , wherein the film containing silicon is a stacked film of a silicon-containing oxide film and a silicon nitride film. 
     
     
         19 . The plasma processing method according to  claim 17 , wherein the mask is formed of at least one selected from the group consisting of polysilicon, amorphous carbon, amorphous silicon and metal-containing material. 
     
     
         20 . The plasma processing method according to  claim 17 , wherein the protection film contains silicon. 
     
     
         21 . The plasma processing method according to  claim 17 , wherein the protection film contains carbon. 
     
     
         22 . The plasma processing method according to  claim 17 , wherein the step (c) initially forms a carbon-containing film and subsequently forms a silicon-containing film. 
     
     
         23 . The plasma processing method according to  claim 17 , wherein the protection film has a thickness that becomes thinner toward a bottom of the recess. 
     
     
         24 . The plasma processing method according to  claim 17 , wherein the step (b) continues before the recess has a bowing shape. 
     
     
         25 . The plasma processing method according to  claim 17 , wherein the plasma is capacitively coupled plasma. 
     
     
         26 . The plasma processing method according to  claim 17 , wherein the plasma is inductively coupled plasma. 
     
     
         27 . The plasma processing method according to  claim 17 , wherein the steps (c) and (d) are performed in a same chamber. 
     
     
         28 . The plasma processing method according to  claim 17 , wherein the steps (c) and (d) are performed in different chambers. 
     
     
         29 . The plasma processing method according to  claim 17 , further comprising: a gas supplying unit configured to supply a etching gas and a film forming gas into the chamber. 
     
     
         30 . The plasma processing method according to  claim 17 , further comprising: a gas supplying unit configured to supply a gas containing fluorocarbon into the chamber. 
     
     
         31 . The plasma processing method according to  claim 17 , further comprising: a gas supplying unit configured to supply a gas containing carbon into the chamber. 
     
     
         32 . The plasma processing method according to  claim 17 , further comprising: a gas supplying unit configured to supply a gas containing silicon into the chamber.

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