Etching Composition

Abstract

This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one metal corrosion inhibitor; 4) at least one organic solvent; 5) at least one amidine base; and 6) water.

What is claimed is: 
     
         1 . An etching composition, comprising:
 1) at least one oxidizing agent comprising hydrogen peroxide, the at least one oxidizing agent being in an amount of from about 0.1% to about 30% by weight of the composition;   2) at least one chelating agent, the at least one chelating agent being in an amount of from about 0.01% to about 1% by weight of the composition;   3) at least one metal corrosion inhibitor comprising substituted or unsubstituted benzotriazole, at the least one metal corrosion inhibitor being in an amount of from about 0.05% to about 1% by weight of the composition;   4) at least one organic solvent;   5) at least one amidine base, the at least one amidine base being in an amount of from about 0.1% to about 5% by weight of the composition; and   6) water;   wherein the composition has a pH of from about 6.5 to at most about 9.5.   
     
     
         2 . The composition of  claim 1 , wherein the composition has a pH from about 6.5 to about 9. 
     
     
         3 . The composition of  claim 1 , wherein the at least one oxidizing agent is in an amount of from about 1% to about 30% by weight of the composition. 
     
     
         4 . The composition of  claim 1 , wherein the at least one chelating agent comprises polyaminopolycarboxylic acid. 
     
     
         5 . The composition of  claim 4 , wherein the polyaminopolycarboxylic acid is selected from the group consisting of mono- or polyalkylene polyamine polycarboxylic acids, polyaminoalkane polycarboxylic acids, polyaminoalkanol polycarboxylic acids, and hydroxyalkylether polyamine polycarboxylic acids. 
     
     
         6 . The composition of  claim 5 , wherein the polyaminopolycarboxylic acid is selected from the group consisting of butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid, trans-1,2-diaminocyclohexane tetraacetic acid, ethylendiamine diacetic acid, ethylendiamine dipropionic acid, 1,6-hexamethylene-diamine-N,N,N′,N′-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropane tetraacetic acid, iminodiacetic acid; 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanol tetraacetic acid, and (hydroxyethyl)ethylenediaminetriacetic acid. 
     
     
         7 . The composition of  claim 1 , wherein the at least one chelating agent is in an amount of from about 0.1% to about 1% by weight of the composition. 
     
     
         8 . The composition of  claim 1 , wherein the at least one metal corrosion inhibitor comprises a substituted benzotriazole. 
     
     
         9 . The composition of  claim 1 , wherein the at least one metal corrosion inhibitor comprises a benzotriazole optionally substituted by at least one substituent selected from the group consisting of alkyl groups, aryl groups, halogen groups, amino groups, nitro groups, alkoxy groups, and hydroxyl groups. 
     
     
         10 . The composition of  claim 1 , wherein the substituted or unsubstituted benzotriazole is selected from the group consisting of benzotriazole, 5-aminobenzotriazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 4-m ethylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole, 5-propylbenzotriazole, 4-isopropylbenzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butyl benzotriazole, 5-(1′,1′-dimethylpropyl)-benzotriazole, 5-(1′,1′,3′-trimethylbutyl)benzotriazole, 5-n-octyl benzotriazole, and 5-(1′,1′,3′,3′-tetramethylbutyl)benzotriazole. 
     
     
         11 . The composition of  claim 1 , wherein the at least one metal corrosion inhibitor is in an amount of from about 0.1% to about 1% by weight of the composition. 
     
     
         12 . The composition of  claim 1 , wherein the at least one organic solvent comprises a solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers. 
     
     
         13 . The composition of  claim 1 , wherein the composition comprises from about 1% to about 30% by weight of the at least one organic solvent. 
     
     
         14 . The composition of  claim 1 , wherein the at least one amidine base comprises a compound selected from the group consisting of substituted or unsubstituted formamidines, substituted or unsubstituted acetamidines, substituted or unsubstituted benzamidines, diminazen, and compounds containing an amidine group in a fused non-aromatic ring. 
     
     
         15 . The composition of  claim 14 , wherein the compound containing an amidine group in a fused non-aromatic ring is 1,8-diazabicyclo[5.4.0]undec-7-ene or 1,5-diazabicyclo[4.3.0]non-5-ene. 
     
     
         16 . The composition of  claim 1 , wherein the at least one amidine base is in the amount of from about 0.3% to about 5% by weight of the composition. 
     
     
         17 . The composition of  claim 1 , wherein the composition comprises from about 35% to about 98% of water. 
     
     
         18 . A method, comprising:
 contacting a semiconductor substrate containing TiN features with the composition of  claim 1  to remove the TiN features.   
     
     
         19 . The method of  claim 18 , further comprising rinsing the semiconductor substrate with a rinse solvent after the contacting step. 
     
     
         20 . The method of  claim 19 , further comprising drying the semiconductor substrate after the rinsing step. 
     
     
         21 . The method of  claim 18 , wherein the method does not substantially remove Co, SiN, or Cu in the semiconductor substrate.