Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

Abstract

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

1 - 20 . (canceled) 
     
     
         21 . A display comprising:
 a substrate;   a field-effect transistor disposed on the substrate, the field-effect transistor comprising a gate electrode, a gate insulating layer, a metal-oxide layer which includes In—Ga—Zn oxide or In—Ga—Zn—Mg oxide, and a source electrode and a drain electrode being laminated in this order;   a layer provided on an opposite side of the metal oxide layer from the gate electrode, each of the gate electrode and the layer having a transmittance of 30% or less in any wavelength in a range of 400 to 500 nm; and   a light-emitting device comprising a light-emitting layer and a pair of electrodes between which a part of the light-emitting layer is interposed, wherein   one of the pair of electrodes is electrically connected to the field-effect transistor,   the layer is provided between the light-emitting layer and the metal-oxide layer in such a manner that a part of the layer, a part of the light emitting layer and a part of the gate electrode overlap each other as viewed from a direction perpendicular to the substrate, and   the layer is an insulating layer.   
     
     
         22 . The display according to  claim 21 , wherein the metal-oxide layer includes In—Ga—Zn oxide, and a composition in a crystalline state is represented by InGaO 3 (ZnO) m  (wherein m is an integer less than 6). 
     
     
         23 . The display according to  claim 21 , wherein the metal-oxide layer includes In—Ga—Zn—Mg—O, and a composition in a crystalline state is InGaO 3 (Zn 1-X Mg X O) m  (wherein m is an integer less than 6, and X is denoted by 0<X≤1). 
     
     
         24 . The display according to  claim 21 , wherein the field-effect transistor is a bottom-gate type transistor. 
     
     
         25 . The display according to  claim 21 , wherein the layer is formed of an organic material and the gate electrode is formed of metal. 
     
     
         26 . The display according to  claim 21 , wherein the layer shields light by absorbing light having a wavelength in a range of 400 to 500 nm. 
     
     
         27 . The display according to  claim 21 , wherein a current flowing into the light-emitting layer is controlled by a voltage of the gate electrode of the field-effect transistor. 
     
     
         28 . The display according to  claim 21 , wherein a width and a length of the gate electrode are equal to or longer than a width and a length of the metal oxide layer, respectively. 
     
     
         29 . The display according to  claim 21 , wherein the light emitting layer comprises an organic material. 
     
     
         30 . The display according to  claim 21 , wherein the field-effect transistor is formed on a flexible substrate. 
     
     
         31 . The display according to  claim 30 , wherein the flexible substrate is a plastic film. 
     
     
         32 . A display according to  claim 21 , wherein the layer contacts the metal oxide layer. 
     
     
         33 . The display according to  claim 21 , wherein the layer contacts an electrode of the pair of electrodes that is closer to the substrate. 
     
     
         34 . The display according to  claim 21 , wherein the second layer overlaps a layer that functions as an electrode of the pair of electrodes that is farther from the substrate when viewed from a direction perpendicular to the substrate.