Molded Semiconductor Package

Abstract

A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

What is claimed is: 
     
         1 . A molded semiconductor package, comprising:
 a mold compound having a first main surface, a second main surface opposite the main surface, and an edge extending between the first and the second main surfaces;   a semiconductor die embedded in the mold compound; and   a plurality of metal pads embedded in the mold compound and electrically connected to the semiconductor die,   wherein the metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound,   wherein the metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound,   wherein the faces of the metal pads uncovered by the mold compound are plated,   wherein the side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound.   
     
     
         2 . The molded semiconductor package of  claim 1 , wherein the faces of the metal pads uncovered by the mold compound are plated with a layer of nickel-phosphorus or nickel-boron alloy and a layer of gold. 
     
     
         3 . The molded semiconductor package of  claim 2 , wherein the metal pads comprise copper, and wherein the faces of the metal pads uncovered by the mold compound have a palladium-catalyzed copper surface which is plated with the layer of nickel-phosphorus or nickel-boron alloy. 
     
     
         4 . The molded semiconductor package of  claim 1 , wherein the plated faces of the metal pads are covered with a protective layer. 
     
     
         5 . The molded semiconductor package of  claim 4 , wherein the protective layer is an antioxidant coating. 
     
     
         6 . The molded semiconductor package of  claim 4 , wherein the protective layer comprises organophosphorous, organaosilane or a mixture of organophosphorous and organaosilane. 
     
     
         7 . The molded semiconductor package of  claim 1 , wherein the side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound by between 3 to 15 microns. 
     
     
         8 . The molded semiconductor package of  claim 1 , wherein the metal pads are leads of a leadframe, and wherein the side face of each metal pad disposed around the periphery of the molded package has the same height as the leadframe. 
     
     
         9 . A molded semiconductor package, comprising:
 a mold compound having a first main surface, a second main surface opposite the main surface, and an edge extending between the first and the second main surfaces;   a semiconductor die embedded in the mold compound; and   a plurality of metal pads embedded in the mold compound and electrically connected to the semiconductor die,   wherein the metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound,   wherein the metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound,   wherein the faces of the metal pads uncovered by the mold compound are plated with a layer of nickel-phosphorus or nickel-boron alloy and a layer of gold.   
     
     
         10 . The molded semiconductor package of  claim 9 , wherein the metal pads comprise copper, and wherein the faces of the metal pads uncovered by the mold compound have a palladium-catalyzed copper surface which is plated with the layer of nickel-phosphorus or nickel-boron alloy. 
     
     
         11 . The molded semiconductor package of  claim 9 , wherein the plated faces of the metal pads are covered with a protective layer. 
     
     
         12 . The molded semiconductor package of  claim 11 , wherein the protective layer is an antioxidant coating. 
     
     
         13 . The molded semiconductor package of  claim 11 , wherein the protective layer comprises organophosphorous, organaosilane or a mixture of organophosphorous and organaosilane. 
     
     
         14 . The molded semiconductor package of  claim 9 , wherein the metal pads are leads of a leadframe, and wherein the side face of each metal pad disposed around the periphery of the molded package has the same height as the leadframe. 
     
     
         15 . A molded semiconductor package, comprising:
 a mold compound having a first main surface, a second main surface opposite the main surface, and an edge extending between the first and the second main surfaces;   a semiconductor die embedded in the mold compound; and   a plurality of metal pads embedded in the mold compound and electrically connected to the semiconductor die,   wherein the metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound,   wherein the metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound,   wherein the faces of the metal pads uncovered by the mold compound are plated,   wherein the plated faces of the metal pads are covered with a protective layer.   
     
     
         16 . The molded semiconductor package of  claim 15 , wherein the faces of the metal pads uncovered by the mold compound are plated with a layer of nickel-phosphorus or nickel-boron alloy and a layer of gold. 
     
     
         17 . The molded semiconductor package of  claim 16 , wherein the metal pads comprise copper, and wherein the faces of the metal pads uncovered by the mold compound have a palladium-catalyzed copper surface which is plated with the layer of nickel-phosphorus or nickel-boron alloy. 
     
     
         18 . The molded semiconductor package of  claim 15 , wherein the protective layer is an antioxidant coating. 
     
     
         19 . The molded semiconductor package of  claim 15 , wherein the protective layer comprises organophosphorous, organaosilane or a mixture of organophosphorous and organaosilane. 
     
     
         20 . The molded semiconductor package of  claim 15 , wherein the metal pads are leads of a leadframe, and wherein the side face of each metal pad disposed around the periphery of the molded package has the same height as the leadframe.